Memory based on flexible two-dimensional semiconductor channel quantum dots and preparation method thereof

A two-dimensional semiconductor and quantum dot technology, applied in the field of non-volatile memory and its preparation, to achieve high switching ratio, wide application range, and large application prospects

Inactive Publication Date: 2019-05-24
FUDAN UNIV
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the size of memory cells continues to approach the physical limit, semiconductor field effect transistors have many difficult problems such as short channel effects.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory based on flexible two-dimensional semiconductor channel quantum dots and preparation method thereof
  • Memory based on flexible two-dimensional semiconductor channel quantum dots and preparation method thereof
  • Memory based on flexible two-dimensional semiconductor channel quantum dots and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals represent the same or similar materials or methods having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention. To simplify the disclosure of the present invention, the materials and methods of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. In addition, various specific process and material examples are provided herein, but one of ordinary skill in the art will recognize the applicability of other processes and / or the use of other materials.

[0034] Hereinafter, according to the accompanying drawings, an example will be given to illustrate the preparation method of the non-vola...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of memories and in particular to a nonvolatile memory based on flexible two-dimensional semiconductor channel quantum dots and a preparation method thereof. The nonvolatile memory, by using zero-dimensional quantum dots as a charge trapping layer and using a two-dimensional semiconductor as a device channel on a substrate based on a flexible material, realizes a high switching ratio and a multi-value storage function by means of the tunneling of charges. The preparation method of the present invention comprises preparing metal oxide by atomic layerdeposition, preparing a two-dimensional material by mechanical stripping or chemical vapor deposition, and preparing quantum dots by spin-coating. The method can prepare a novel nonvolatile memory with a high switching ratio and a multi-value storage function, opens up a new field where two-dimensional semiconductor materials and zero-dimensional quantum dots are combined, and has a broad application prospect.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a nonvolatile memory based on flexible two-dimensional semiconductor channel quantum dots and a preparation method thereof. Background technique [0002] Memory is a memory device used to save information in modern information technology. According to its speed and data retention time, it can be roughly divided into volatile memory and nonvolatile memory. Volatile memories take Static Random Access Memory (SRAM) and Dynamic Random Access Memory (DRAM) as examples. Although they have a fast writing speed, the data storage time can only stay on the order of milliseconds. Although the writing time of non-volatile memory is slower than that of volatile memory, the storage time of its data can usually be kept for more than ten years (such as ROM and flash memory, flash). Although both have advantages and disadvantages in access speed and storage time, they both play an im...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11568
Inventor 张卫张振汉王水源周鹏
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap