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Device and method for accurately demarcating ultrafast growth rate of graphene

A growth rate, graphene technology, applied in metal material coating process, coating, gaseous chemical plating and other directions, can solve the problems of graphene rate error, limited to a few minutes or even ten minutes, and achieve low cost , to prevent inaccurate calibration, the process is simple and fast

Active Publication Date: 2019-06-04
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Previously, for slow-growing graphene samples, people used a simple ratio between the final size of graphene and the time of feeding the reaction gas source to roughly estimate the growth rate of graphene, but since the nucleation of graphene is a Probabilistic events, so the rate of graphene detected by this method will have a large error
After that, people used the method of isotope calibration, and then used Raman technology to detect the signals of different carbon sources to determine the growth rate of graphene. However, due to the diffusion effect of carbon sources, the time resolution of this method can only be limited to a few minutes or even a few minutes. within ten minutes

Method used

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  • Device and method for accurately demarcating ultrafast growth rate of graphene
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  • Device and method for accurately demarcating ultrafast growth rate of graphene

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Experimental program
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Effect test

Embodiment 1

[0040] (1), place the metal foil on the quartz substrate, put it into the nozzle nozzle in the quartz tube, feed the inert gas Ar into the air inlet 1, and the flow rate is 500 sccm, then start to heat up, and the heating time lasts 60 minutes;

[0041] (2) When the temperature rises to 1000°C, H is introduced into the air inlet 1 2 Gas, H 2 The flow rate is 5sccm, and the annealing process is carried out, and the annealing time is 40min;

[0042] (3), after the annealing is finished, pass into the quartz tube through the air inlet 1 12 CH 4 Gas, the flow rate is 5 sccm; through the control line 2 to the air inlet 2 13 CH 4 Gas with a flow rate of 2 sccm. The pulse width of line 2 is set to 0.1s, and the pulse interval is set to 1s. The growth time is 2min;

[0043] (4), after the end of the growth, turn off the heating power supply, stop feeding the reaction gas, under Ar and H 2 Cool to room temperature in a protective atmosphere to obtain large-size single-crystal gra...

Embodiment 2

[0046] (1), place the metal foil on the quartz substrate, put it into the nozzle nozzle in the quartz tube, feed the inert gas Ar into the air inlet 1, and the flow rate is 500 sccm, then start to heat up, and the heating time lasts 60 minutes;

[0047] (2) When the temperature rises to 1000°C, H is introduced into the air inlet 1 2 Gas, H 2 The flow rate is 5sccm, and the annealing process is carried out, and the annealing time is 40min;

[0048] (3), after the annealing finishes, pass into the Ar of 10sccm, the H of 0.5sccm to the air inlet 2 through the control circuit 1 2 , 2 sccm 12 CH 4 Gas; 10sccm of Ar and 0.1sccm of H are introduced into the gas inlet 2 through the control line 2 2 , 0.5 sccm 13 CH 4 gas. The pulse width of line 1 and line 2 are both set to 0.1s, and the pulse interval is set to 0.1s. The growth time is 2min;

[0049] (4), after the end of the growth, turn off the heating power supply, stop feeding the reaction gas, under Ar and H 2 Cool to ...

Embodiment 3

[0052] (1), place the metal foil on the quartz substrate, put it into the nozzle nozzle in the quartz tube, feed the inert gas Ar into the air inlet 1, and the flow rate is 500 sccm, then start to heat up, and the heating time lasts 60 minutes;

[0053] (2) When the temperature rises to 1000°C, H is introduced into the air inlet 1 2 Gas, H 2 The flow rate is 5sccm, and the annealing process is carried out, and the annealing time is 40min;

[0054] (3), after the annealing is finished, pass the control line 1 to the air inlet 2 12 CH 4 Gas, the flow rate is 2 sccm; through the control line 2 to the gas inlet 2 13 CH 4 Gas, the flow rate is 0.5 sccm. The pulse width of line 1 and line 2 are both set to 1s, and the pulse interval is set to 2s. The growth time is 2min;

[0055] (4), after the end of the growth, turn off the heating power supply, stop feeding the reaction gas, under Ar and H 2 Cool to room temperature in a protective atmosphere to obtain large-size single-c...

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Abstract

The invention provides a device and method for accurately demarcating the ultrafast growth rate of graphene, and aims to overcome the defect existing in the prior art. The method combines an isotope demarcating method with a local carbon source supplying method, and a pulse control circuit is utilized, so that the ultrafast growth rate of the graphene can be quickly and accurately demarcated; andthe whole process is simple and convenient to operate, controllable in procedure and high in detection sensitivity.

Description

technical field [0001] The invention relates to a device and method for accurately calibrating the ultrafast growth rate of graphene. Background technique [0002] In recent years, graphene and other types of two-dimensional atomic layer thick materials have attracted much attention due to their excellent physical properties. Both theoretical calculations and scientific experiments have shown that graphene has unlimited development potential in the fields of electronics and optoelectronics. In order to finally realize the application of graphene in integrated circuits, a key problem that needs to be solved urgently is the rapid preparation of large single-crystal graphene. At present, there are two main methods for preparing large single crystal graphene: 1. Nucleation at a single site and gradually growing into a large single crystal graphene. At present, scientists have successfully synthesized 1.5-inch large single-crystal graphene by using a single nucleation site meth...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/455C23C16/52
Inventor 刘灿徐小志吴慕鸿俞大鹏王恩哥刘开辉
Owner PEKING UNIV