X-ray detector, X-ray detector photoelectric conversion layer manufacturing method and medical equipment

Abstract

The invention provides an X-ray detector, an X-ray detector photoelectric conversion layer manufacturing method and medical equipment. The X-ray detector comprises a scintillator, a photosensitive layer, a photoelectric conversion layer, a signal reading device and a light blocking member, wherein the scintillator is arranged on the light incident side of the X-ray detector and converts X rays into visible light; the photosensitive layer is arranged on the light emergent side of the scintillator and performs photovoltaic conversion on the visible light, the photosensitive layer comprises a transparent conductive thin film and a photoelectric conversion layer, and the transparent conductive thin film is arranged between the scintillator and the photoelectric conversion layer; the photoelectric conversion layer is of a uniform porous structure, and is filled with silicon particles in holes; the signal reading device is electrically connected with the photosensitive layer; and the light blocking member is arranged between the scintillator and the signal reading device and corresponds to the position of an active layer of the signal reading device, so as to block the incident light ofthe active layer. The X-ray detector has sensitive photoelectric conversion performance and high photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the field of detectors, in particular to an X-ray detector, a method for manufacturing a photoelectric conversion layer of the X-ray detector and medical equipment with the X-ray detector. Background technique [0002] X-ray detectors are widely used in medical instruments, such as chest X-ray imaging; in the prior art, the photoelectric conversion function of the X-ray detector is mainly completed by the amorphous silicon photosensitive layer, and the X-rays pass through the scintillator ( At present, CsI) is mainly converted into visible light, and then the visible light is converted into an electrical signal through the amorphous silicon photosensitive layer, and the electrical signal is output by a signal reading device (Thinfilm transistor, referred to as TFT). Due to the unstable structure of amorphous silicon and low light conversion efficiency, the photosensitive layer of amorphous silicon absorbs a wide range of light ...

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Problems solved by technology

[0003] The main purpose of the present invention is to provide an X-ray detector, aiming to solve the problem that the light wave range absorbed by the amorphous silicon photosensitive layer of the X-ray detector in the prior art is relatively wide, and the conversion of light is not sensitive enough

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