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X-ray detector, method for manufacturing photoelectric conversion layer of X-ray detector, and medical device

A technology of a photoelectric conversion layer and a manufacturing method, which is applied in the field of detectors, can solve the problem of insufficient light conversion sensitivity, and achieves the effects of high photoelectric conversion efficiency, uniform size, and sensitive photoelectric conversion performance.

Active Publication Date: 2021-04-16
HKC CORP LTD
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Problems solved by technology

[0003] The main purpose of the present invention is to provide an X-ray detector, aiming to solve the problem that the light wave range absorbed by the amorphous silicon photosensitive layer of the X-ray detector in the prior art is relatively wide, and the conversion of light is not sensitive enough

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  • X-ray detector, method for manufacturing photoelectric conversion layer of X-ray detector, and medical device
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  • X-ray detector, method for manufacturing photoelectric conversion layer of X-ray detector, and medical device

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0025] It should be noted that all directional indications (such as up, down, left, right, front, back...) in the embodiments of the present invention are only used to explain the relationship between the components in a certain posture (as shown in the accompanying drawings). Relative positional relationship, movement conditions, etc., if the specific posture changes, the directional indication will also change accordingly.

[0026] In addition, the ...

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Abstract

The invention provides an X-ray detector, a method for manufacturing a photoelectric conversion layer of an X-ray detector, and a medical device. The X-ray detector includes: The ray is converted into visible light; the photosensitive layer is the light-emitting side of the scintillator, and photoelectrically converts visible light. The photosensitive layer includes a transparent conductive film and a photoelectric conversion layer, and the transparent conductive film is located between the scintillator and the photoelectric conversion layer; the photoelectric conversion layer It is a uniform porous structure, and the holes are filled with silicon particles; the signal reading device is electrically connected to the photosensitive layer; the light-shielding member is located between the scintillator and the signal reading device and is connected to the active layer of the signal reading device Corresponding to the position to block the incident light of the active layer. The invention has sensitive photoelectric conversion performance and high photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the field of detectors, in particular to an X-ray detector, a method for manufacturing a photoelectric conversion layer of the X-ray detector and medical equipment with the X-ray detector. Background technique [0002] X-ray detectors are widely used in medical instruments, such as chest X-ray imaging; in the prior art, the photoelectric conversion function of the X-ray detector is mainly completed by the amorphous silicon photosensitive layer, and the X-rays pass through the scintillator ( At present, CsI) is mainly converted into visible light, and then the visible light is converted into an electrical signal through the amorphous silicon photosensitive layer, and the electrical signal is output by a signal reading device (Thinfilm transistor, referred to as TFT). Due to the unstable structure of amorphous silicon and low light conversion efficiency, the photosensitive layer of amorphous silicon absorbs a wide range of light ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/142H01L27/146A61B6/00
CPCY02E10/50
Inventor 卓恩宗
Owner HKC CORP LTD
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