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Manufacturing method of self-alignment germanium-silicon HBT device adopting nonselective epitaxy

A non-selective, manufacturing method technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect suitable for mass production

Active Publication Date: 2019-06-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] This process requires selective silicon germanium epitaxy, and the integration scheme is relatively simple, but it is challenging to obtain a defect-free silicon germanium epitaxial layer when the lateral size of the device is gradually reduced.

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  • Manufacturing method of self-alignment germanium-silicon HBT device adopting nonselective epitaxy
  • Manufacturing method of self-alignment germanium-silicon HBT device adopting nonselective epitaxy
  • Manufacturing method of self-alignment germanium-silicon HBT device adopting nonselective epitaxy

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Embodiment Construction

[0043] Specific embodiments of the present invention are disclosed below; however, it is to be understood that the disclosed embodiments are merely exemplary of the invention, which may be embodied in various forms. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting. Further, the nouns and terms used herein are not limiting; but provide an understandable description of the invention. The present invention will be better understood by considering the following description in conjunction with the accompanying drawings, in which like reference numerals represent like meanings. The drawings are not drawn to scale.

[0044] The steps of a preferred embodiment of the method for manufacturing a self-aligned silicon-germanium HBT device using non-selective epitaxy of the present invention are as follows:

[0045] Step one, such as Figure 4 As shown, photolithography and etching form a silicon germanium epitaxial window, and...

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Abstract

The invention discloses a manufacturing method of a self-alignment germanium-silicon HBT device adopting nonselective epitaxy. Low-temperature germanium-silicon selective epitaxy can form required germanium concentration, boron doping percentage and carbon concentration within a great range, but selective epitaxy can influence the selectivity of epitaxial growth due to different doping ratios, sothat required impurity distribution can be obtained by experiments for many times during research and development of a device, and the pressure is brought to the research and development progress. Themethod adopts the selective epitaxy in an outer base region; a deposition layer can be monocrystal or polycrystal; the technology complexity is low; and the performance of the device is excellent.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a method for manufacturing a self-aligned silicon-germanium HBT device using non-selective epitaxy. Background technique [0002] P-type polysilicon is used to raise the outer base region, and the self-aligned device structure of the inner wall is used between the emitter and the outer base region, which can reduce the base resistance and base-collector capacitance at the same time. Such a germanium-silicon heterojunction double The HBT device can obtain the highest oscillation frequency fmax greater than 300GHz, and its performance can be comparable to III-V devices, and is widely used in optical communication and millimeter wave applications. [0003] SiGe HBT devices use germanium-silicon-carbon alloy doped with impurity boron as the base with a small energy band width. Due to the energy band difference between the emitter and the base, a higher base can be use...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L29/737H01L29/16
CPCH01L29/66242H01L29/7378H01L29/165H01L29/1004H01L21/02532H01L21/02595H01L21/02576H01L21/02661H01L29/7375H01L21/02164H01L21/31116H01L29/04H01L29/167H01L21/3065
Inventor 周正良
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP