A Plasma Cutting Process for Realizing Ultra-Narrow Cutting Road

Abstract

A process for plasma cutting to realize ultra-narrow slits, which can realize the cutting of ultra-narrow slits on semiconductor wafers, can effectively maintain product strength, and avoid the problem of product chip rupture in subsequent production, which includes the following process steps : Step 1, do ball planting on the front side of the semiconductor wafer, step 2: attach the metal ring whose size is suitable for the semiconductor wafer to the BG‑UV film, and then flip the semiconductor wafer and attach it to the inner side of the metal ring , step 3: use semiconductor wafer grinding equipment to reduce the thickness of the semiconductor wafer, step 4: apply protective glue to the back of the semiconductor wafer, step 5: groove the protective glue on the back of the semiconductor wafer, Step 6: Corresponding to the grooved position of the protective glue, use a plasma cutting machine to cut the ultra-narrow slit on the back of the semiconductor wafer. Step 7: Clean the semiconductor wafer with the protective glue. Step 8: Cut the semiconductor wafer Pour round onto DC‑UV film.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafer cutting equipment, in particular to a process for realizing an ultra-narrow cutting line by plasma cutting. Background technique [0002] In the existing plasma cutting process, laser grooving is mostly used to cut a dicing line with a certain width on the front side of the semiconductor wafer. The cutting process in the prior art can generally achieve a wide dicing line cutting, and the dicing line width Generally greater than 30 μm. However, in the practical application of wafer semiconductors, in order to facilitate placing more chips on the wafer and reduce the investment cost of the semiconductor wafer, it is often necessary to cut multiple ultra-narrow dicing lines with a width of less than 30 μm on the semiconductor wafer. However, in the process of cutting with a laser cutting machine, due to the thermal influence of the laser and the existence of cutting offsets during the cu...

AI Technical Summary

Problems solved by technology

[0003] In view of the fact that the existing cutting process in the prior art is difficult to achieve ultra-narrow kerf cutting, especially for kerf cutting with a width less than 30 μm, and it is easy to cause a decrease in product strength, resulting in the problem that product chips are prone to cracks in subsequent production. The invention provides a process for plasma cutting to realize ultra-narrow slits, which can realize the cutting of ultra-narrow slits on semiconductor wafers, effectively maintain product strength, and avoid the problem of product chip breakage in subsequent production

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