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Preparation method of heat-conducting artificial graphite gasket

A technology of artificial graphite and graphite flakes, used in lighting and heating equipment, chemical instruments and methods, semiconductor devices, etc., can solve the problem of heat dissipation of high-power LED lamps, achieve good thermal conductivity, overcome easy drying failure, and compressibility ratio high effect

Active Publication Date: 2019-06-21
CHONGQING YUNTIANHUA HIGH END NEW MATERIALS DEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a thermally conductive artificial graphite gasket to solve the heat dissipation problem of high-power LED lamps

Method used

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  • Preparation method of heat-conducting artificial graphite gasket
  • Preparation method of heat-conducting artificial graphite gasket
  • Preparation method of heat-conducting artificial graphite gasket

Examples

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preparation example Construction

[0021] A preparation method of thermally conductive artificial graphite gasket, which comprises the following steps:

[0022] Step 1, using biaxially stretched polyimide film as raw material, heating carbonization at 1200°C-1400°C, and ultra-high temperature graphitization at 2800°C-2900°C to obtain the first graphite material;

[0023] Step 2, the first graphite material is placed in an acid solution for treatment; then, the acid-treated graphite material is placed in a carbonization furnace under vacuum conditions and heated to 600-1000°C to obtain a second graphite material; preferably, in In step 2, the acid solution is nitric acid, perchloric acid, phosphoric acid or a mixture of at least two. More preferably, the acid solution also includes an auxiliary intercalation agent, and the auxiliary intercalation agent is potassium permanganate or hydrogen peroxide.

[0024] Step 3, compressing the second graphite material in its thickness direction, the compressed thickness is...

Embodiment 1

[0027] Cut the 50-micron thick biaxially stretched PI film (polyimide film) into 200mm*300mm size, carbonize at 1400 degrees Celsius, and then graphitize at 2900 degrees Celsius to obtain the first graphite material. The first graphite material The thickness can reach about 50 microns. The surface of the graphite material has good flatness and good appearance. It can be compressed to a maximum of 25 microns and the compression ratio is 50%;

[0028] Further, the first graphite material is put into a molar concentration ratio of [A1], sulfuric acid, hydrogen peroxide in a mixed solution of 2.5:10:2.5 to obtain an oxidized intercalated graphite material;

[0029] Further put the oxidized intercalated graphite material into the carbonization furnace, and rapidly raise the temperature to 800 degrees Celsius under the protection of nitrogen to obtain the second graphite material. The second graphite material is soft and has a thickness of up to 5 mm. The surface is uneven and has ex...

Embodiment 2

[0033] Cut the 50-micron thick biaxially stretched PI film into 300mm*300mm size, heat up carbonization at 1200 degrees Celsius, and then undergo ultra-high temperature graphitization at 2800 degrees Celsius to obtain the first graphite material. The thickness of the first graphite material can reach about 48 microns. The graphite material has good surface flatness and good appearance, and can be compressed to a maximum of 22 microns, with a compression ratio of 54%;

[0034] Further, the first graphite material is put into a mixed solution of nitric acid, sulfuric acid, and potassium permanganate with a molar concentration ratio of 5:10:0.5 to obtain an oxidized intercalated graphite material;

[0035] Further put the oxidized intercalated graphite material into the carbonization furnace, and rapidly raise the temperature to 500 degrees Celsius under the protection of nitrogen to obtain the second graphite material. The modified second graphite material is soft and the thickne...

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Abstract

The invention discloses a preparation method of a heat-conducting artificial graphite gasket. The preparation method comprises the following steps: step 1, taking a two-way stretch polyimide film as araw material, and performing heating carbonization and ultra-high-temperature graphitization to obtain a first graphite material; step 2, placing the first graphite material in an acid solution, then, placing the acid treated graphite material in a carbonization furnace under a vacuum condition, heating the graphite material to 600-1,000 DEG C, and performing treatment to obtain a second graphitematerial; step 3, compressing the second graphite material in the thickness direction of the second graphite material to obtain a graphite sheet, wherein the compressed thickness is 1 / 30-2 / 30 of theoriginal thickness of the second graphite material. Different from traditional graphite gaskets and artificial graphite films, the heat-conducting artificial graphite gasket prepared with the method has high compressible ratio, thickness adjustable in the range of 8-50 micrometers and good heat conductivity, can well fill solid interface and is resistant to aging and extreme environments and particularly applicable to heat dissipation fields of devices with high power and smaller filling gaps, such as high-power LED lamps.

Description

technical field [0001] The invention belongs to the technical field of graphite heat dissipation materials, in particular to a preparation method of a thermally conductive artificial graphite gasket. Background technique [0002] LED has many advantages such as low operating voltage, low power consumption, high luminous efficiency, and small size, and has been widely used in lighting and decorative lamps and other fields. The junction temperature of the LED chip affects the photoelectric chromaticity and electrical parameters such as light extraction efficiency, color, wavelength, and forward voltage, etc., and affects the life and reliability of the device. Increasing its input current while trying to increase its internal and external luminous efficiency is an effective way to improve brightness, but at the same time it will also generate a lot of heat. The rise of the junction temperature of the LED chip will lead to a decrease in the luminous efficiency. Therefore, it is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/205F21V29/85H01L33/64F21Y115/10
Inventor 刘晏君吕新坤戴曛晔陈玉仙陈凯
Owner CHONGQING YUNTIANHUA HIGH END NEW MATERIALS DEV CO LTD