Hot isostatic pressing device suitable for ammonothermally producing gallium nitride monocrystal product

Abstract

The invention discloses a hot isostatic pressing device suitable for ammonothermally producing a gallium nitride monocrystal product. The hot isostatic pressing device is characterized by comprising aworking cylinder (2), in which a hot area is configured, and a gallium nitride single crystal growth container (3) arranged in the hot area (2) and capable of generating gallium nitride single crystal in diameter of 200-400 mm or larger; the hot zone is divided into an upper heating zone and a lower heating zone, which are used for correspondingly heating the crystallization zone and the dissolving zone of the gallium nitride single crystal growth container (3) respectively. Due to the hot area arranged correspondingly to the position of a baffle (18) in the gallium nitride single crystal growth container (3), it is able to generate a middle heat insulation ring (16) which enables the upper area and the lower area of the baffle (18) to generate a step temperature difference suitable for generating a gallium nitride single crystal product through the ammonothermal method. According to the device, the gallium nitride single crystal growth container (3) is improved, that is, the workingstress of the high-pressure kettle becomes pressure stress, so that the specification and size of the integrally forged gallium nitride single crystal growth container (3) can be increased, and a gallium nitride single crystal product in diameter of 200-400 mm or larger can be generated.

Description

technical field [0001] The invention relates to a hot isostatic pressing device suitable for producing gallium nitride single crystal products by ammonothermal method, in particular to a hot isostatic pressing device suitable for producing large-scale gallium nitride single crystal products or producing gallium nitride single crystal products in large quantities by ammonothermal method hot isostatic pressing device. Background technique [0002] The third-generation semiconductor materials are wide-bandgap semiconductor materials represented by gallium nitride (GaN), silicon carbide (SiC), diamond, and zinc oxide. Gallium nitride has unique properties such as large band gap, high breakdown electric field, high thermal conductivity, high electron saturation drift velocity, and small dielectric constant. It is widely used in optoelectronic devices, power electronics, radio frequency microwave devices, lasers and detectors, etc. It has a broad market prospect. [0003] GaN si...

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Problems solved by technology

The process temperature of the autoclave is generally 400-650 °C, and the process pressure is generally 100-200 MPa. The design and manufacture of the autoclave need to be licensed by the State Administration of Quality Supervision. Since the autoclave is an integral forged pressure vessel, and the working time is long, The heat preservation stage lasts 20-80 days. Therefore, due to the limitation of structural design and working stress, it is difficult to make a large-scale autoclave to produce gallium nitride single crystal products with a diameter of 200-400mm or even larger

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