A device and method for evaluating the compactness of silicon-based back-sealing film

Abstract

The invention discloses a device and a method for evaluating the compactness of a silicon-based back-sealing film. The device includes: 24V power supply, leak detection tank, detection electrolyte, detection electrode and rectangular connection electrode; wherein, the positive pole and negative pole of the 24V power supply are respectively connected to the detection electrode and the rectangular connection electrode through wires; the detection electrode and the rectangular connection electrode are placed In the leak detection tank, the front side of the sample to be tested on the silicon-based back-sealing film is connected to a rectangular connection electrode; the detection electrode is located above the sample to be tested on the silicon-based back-sealing film. The method includes: (1) testing the refractive index of the back-sealing film of the sample to be tested; (2) removing the front film of the sample and connecting it to a rectangular electrode; (3) placing the sample connected to the electrode flat in the electrolyte; (4) opening the Power supply, leak detection with detection electrodes; (5) Test the number of leaks on the entire surface; (6) Test leakage and yield. The invention is not limited by the preparation process, has wide application, and fills the gap in the detection of the compactness of the silicon-based silicon dioxide back-sealing film.

Description

technical field [0001] The invention relates to a device and method for evaluating the compactness of a silicon-based back-sealing film. Background technique [0002] With the rapid development of the domestic integrated circuit industry, the demand for silicon wafer substrate materials is also increasing, and the quality requirements are becoming more and more stringent. In order to prevent the out-diffusion and Self-doping, the introduction of the back sealing process, because silicon dioxide has high hardness, good wear resistance, good heat insulation, high light transmittance, strong corrosion resistance and good dielectric properties, while impurities in silicon dioxide The diffusion coefficient in the silicon base is much smaller than that in the silicon base, so the silicon base back seal usually grows a layer of silicon dioxide film on the back of the silicon base wafer substrate to effectively block the impurities in the wafer substrate. To prevent impurities from...

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Problems solved by technology

[0004] At present, there is no systematic evaluation method for silicon-based back seals, mainly through the refractive index test. This method has serious defects and can only confirm whether it is silicon dioxide. Impurities overflow during the use of IC devices lead to serious failure. Silicon-based back seals The density of the film is unstable and the yield is low

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