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Silicon wafer surface treatment method

A silicon wafer surface and treatment method technology, applied in the field of silicon wafer processing, can solve problems affecting the electrical performance of integrated circuits, device life reduction, device failure, etc., and achieve the effect of monitoring the metal level on the silicon wafer surface

Inactive Publication Date: 2019-06-25
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The surface metal on the surface of the silicon wafer will affect the electrical properties of the integrated circuit. The surface metal includes light metals (Na, Mg, Al, K, Ca, etc.), heavy metals (Cr, Mn, Fe, Ni, Cu, Zn, etc.), and the silicon wafer is Subsequent processing of epitaxy, or during the device process, excessive metal content on the surface will lead to reduced device life or device failure, resulting in loss of product quality and reduced product yield

Method used

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Embodiment

[0022] This embodiment is described by taking a 12-inch polished silicon wafer and an epitaxial silicon wafer as examples.

[0023] 1. Take 6 pieces of polished wafers from the same batch, and take 3 pieces for epitaxial growth, and then conduct metal analysis tests on the remaining 3 pieces of 12-inch polished silicon wafers and 3 pieces of 12-inch epitaxial silicon wafers;

[0024] 2. Use the surface particle tester KLA Tencor SP1 to test the surface particles of 6 pieces of 12-inch silicon wafers to ensure that the surface is not contaminated by large areas of particles;

[0025] 3. Put three 12-inch polished silicon wafers and three 12-inch epitaxial wafers into a high-temperature oxidation furnace respectively, inject high-purity oxygen and argon, and carry out high-temperature oxidation at 1100 ° C, and grow an oxide film of 1000 angstroms on the surface.

[0026] 4. To prepare sampling solution, use TAMA-AA10-H 2 o 2 Specification, 35%H 2 o 2 (impurity content less ...

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Abstract

The invention discloses a silicon wafer surface treatment method, which comprises the following steps: (1) selecting a clean polished silicon wafer or epitaxial silicon wafer; (2) oxidizing the surface of the silicon wafer at high temperature to grow an oxide film; and (3) carrying out surface treatment sampling by using sampling solution, analyzing and testing the sampling solution to obtain themetal content on the surface of the silicon wafer, and evaluating the metal contamination on the surface of the silicon wafer. By using the silicon wafer surface treatment method of the invention, silicon wafer surface treatment can be carried out quickly, efficiently and in batches, the metal content on the surfaces of silicon wafers can be tested and analyzed in time, and the purpose of monitoring the metal level on the surfaces of silicon wafers can be achieved.

Description

technical field [0001] The invention relates to a silicon chip surface treatment method, which belongs to the technical field of silicon chip processing. Background technique [0002] In recent years, the usage rate of silicon wafers for semiconductors has become higher and higher, and the amount of silicon wafers has also increased, and the size of silicon wafers has gradually increased to 12 inches, or even 18 inches, but the integration of silicon wafers used in semiconductor integrated circuits Increase the line width and reduce the line width, which means that the quality requirements for silicon wafers are becoming more and more stringent. The quality parameters of silicon wafers mainly include surface particles or defects, surface metal content, metal (FE) content in the body, minority carrier lifetime, and diffusion length. In the process of producing and processing silicon wafers, it is necessary to strictly monitor and analyze the performance of these parameters. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 赵而敬曹孜王永涛刘建涛韩晨华郑捷张静张建张岩
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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