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One-time programmable non-volatile fuse memory cell

A storage unit, non-volatile technology, applied in the field of one-time programmable non-volatile fuse storage unit

Pending Publication Date: 2019-07-02
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Embodiments of the present invention provide a one-time programmable non-volatile fuse storage unit to solve or alleviate one or more technical problems in the prior art

Method used

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  • One-time programmable non-volatile fuse memory cell

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Embodiment Construction

[0039] In the following, only some exemplary embodiments are briefly described. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and descriptions are to be regarded as illustrative in nature and not restrictive.

[0040] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise", "Axial" , "radial", "circumferential" and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, rather than indicating or im...

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PUM

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Abstract

The invention provides a one-time programmable nonvolatile fuse memory cell, which is characterized in that a grid electrode of a PMOS transistor is connected with programming voltage, a source electrode, a drain electrode and an N well to form a first connection point; the grid electrode of the NMOS transistor is connected to the control signal, and the source electrode is connected to the firstconnection point, wherein, when the NMOS transistor is turned on under the control of the control signal, a programming voltage greater than a threshold voltage is applied to the gate of the PMOS transistor, and a predetermined period of time is maintained to change at least one physical characteristic of the PMOS transistor, thereby changing the logic level output by the first connection point. According to the one-time programmable nonvolatile fuse memory cell, no extra mask is needed, the requirements of different manufacture procedures of the CMOS process can be met, and the diversified one-time programmable memory solutions are provided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a one-time programmable non-volatile fuse storage unit. Background technique [0002] One-time programmable memory (One Time Programmable, referred to as OTP) can only be programmed once, and cannot be erased by electricity. It can be applied to program code memory, serial configuration memory, System-on-Chip (SOC for short) ), etc., for ID identification, correction, etc. [0003] In the prior art, OTP is mostly implemented based on the logic architecture of antifuse, such as oxide layer-silicide-oxide (ONO for short) or metal-oxide-metal (MOM for short) to realize antifuse . The anti-fuse has a very high resistance before programming, about several hundred megohms, and is broken down by high voltage during programming, and the resistance is reduced to a thousand ohm level or even lower, so as to realize the OTP function. However, both the ONO and MOM structures requir...

Claims

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Application Information

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IPC IPC(8): G11C17/16G11C17/18
CPCG11C17/16G11C17/18
Inventor 洪根刚
Owner CHANGXIN MEMORY TECH INC