Plasma processing device capable of reducing pollution particles and method thereof

Abstract

The invention discloses a plasma processing device capable of reducing pollution particles and a method thereof. The plasma processing device comprises a cavity and a lining. A dielectric window is arranged above the lining. The cavity, the lining and the dielectric window are enclosed to form a reaction cavity. The inner bottom of the reaction cavity comprises a base for placing a wafer. A vacuumpumping device for pumping gas in the reaction cavity to maintain low pressure in the reaction cavity is arranged on the lower part of the base. A baffle plate shielding between the opening on the side wall of the cavity and the opening on the side wall of the lining is arranged in the cavity to block the pollution particles in the gas flowing from the transmission cavity to the reaction cavity.A hole groove is arranged on the lower part of the lining. The flow space formed by enclosing of the outer wall of the lining and the inner wall of the cavity under the baffle plate is communicated with the inner space of the lining through the hole groove so that the pollution particles are evacuated by the vacuum pumping device. The current wafer is ensured not to be contaminated, the contamination of the next transmission wafer can be improved and the cleaning gas can be piped in so that the effect of taking out the contaminated particles of the reaction cavity can be more remarkable and the efficiency is higher.

Description

technical field [0001] The invention relates to the technical field of anti-corrosion protection of etching equipment, in particular to a plasma treatment device and a method thereof which can reduce pollution particles. Background technique [0002] In the prior art, during the transfer process between the transmission chamber (Transmission Machine, TM for short) and the plasma processing device 1 (Plasma Machine, PM for short), due to the imbalance of the air pressure in the two chambers, there will be a gap between the two chambers. As the gas flows, the particles suspended in each cavity will flow to another cavity with the gas, causing particle pollution in the cavity. [0003] Such as figure 1 Shown is a simplified schematic diagram of an etching (ETCH) system, which is composed of a transfer chamber 2 , a vacuum valve 3 (slit valve) and a plasma processing device 1 . Wherein, the plasma processing apparatus 1 includes a dielectric window 11 (insulation window), a li...

AI Technical Summary

Problems solved by technology

This process is effective for the protection of the current wafer, but there is still a hidden danger for the next wafer, because as the gas in the transfer chamber 2 rushes to the particles of the shielding plate 16 in the PM, it will be blocked by the shielding plate 16 And drop a part of the area formed between the bushing 12, the shielding plate 16 and the cavity 13, this area is a dead zone, that is, it is not easy to be sucked away by the vortex pump 15 immediately.

[0006] But when it is the turn of the second wafer transfer, the gas in the cavity of the transfer chamber 2 flows to the plasma processing device 1 again, and the gas in the transfer chamber 2 flows to the cavity of the plasma processing device 1 again. Disturbance will disturb the particles dropped during the last transfer process in the dead zone, and bring the disturbed particles to the electrostatic chuck and wafer, thus contaminating the wafer

Among them, the dead zone formed between the liner 12, the shielding plate 16 and the cavity 13, because there is no effective gas flow path, the particles falling in the dead zone will eventually contaminate the subsequent wafer transfer.

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