Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of encapsulation thin film and its preparation method, optoelectronic device

A technology for packaging films and organic films, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of poor water and oxygen barrier properties of packaging films, enhance water and oxygen barrier properties, meet the requirements of water vapor permeability, and improve the use of effect of life

Active Publication Date: 2022-01-18
TCL CORPORATION
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above deficiencies in the prior art, the object of the present invention is to provide a packaging film and its preparation method, and a photoelectric device, aiming to solve the problem of poor water and oxygen barrier performance of the existing packaging film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of encapsulation thin film and its preparation method, optoelectronic device
  • A kind of encapsulation thin film and its preparation method, optoelectronic device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0048] Further, the present invention also provides a method for preparing an encapsulation film, wherein, such as figure 2 shown, including steps:

[0049]S1. Providing a device to be packaged, and depositing a first organic thin film on the surface of the device;

[0050] S2. Depositing a first blended film on the first organic thin film, the first blended film is composed of a polymer and a ceramic material;

[0051] S3. Deposit N layers of ceramic films stacked on the first blend film, 1≤N≤4;

[0052] S4. Depositing a second blended film on the Nth layer of ceramic film, the second blended film is composed of a polymer and a ceramic material;

[0053] S5. Depositing a second organic thin film on the second blend film.

[0054] Further, the preparation of depositing the first mixed film on the first organic thin film includes the following steps:

[0055] Under alkaline conditions, the inorganic precursor and the organic monomer are reacted for the first time under an ...

Embodiment 1

[0083] 1. The structure of the optoelectronic device is: ITO substrate / PEDOT:PSS (50 nm) / poly-TPD (30 nm) / quantum dot light-emitting layer (20 nm) / ZnO (30nm) / silver (70 nm) / encapsulation film (4100 nm), wherein the material of the packaging film is PLA / SiO 2 -PLA blend film / SiO 2 / SiO 2 -PLA blend film / PLA composite film, the SiO 2 The thickness of the film is 100nm, the thickness of the two layers of PLA film is 1000nm, and the thickness of the two layers of SiO 2 -The thickness of the PLA blend film is 1000nm.

[0084] 2. The packaging method of the optoelectronic device comprises steps:

[0085] 1) Cast a 10 mg / ml PLA chloroform solution on the top surface of the silver electrode of the optoelectronic device to form a film, and then vacuum dry it at 0.8 Pa at 120 °C for 30 min to prepare a PLA film;

[0086] 2) Under alkaline conditions, SiO with a mass fraction of 5 wt% 2 The alcohol solution and lactic acid were reacted in a nitrogen atmosphere at a ratio of 1:1, t...

Embodiment 2

[0091] 1. The structure of the optoelectronic device is: ITO substrate / PEDOT:PSS (50 nm) / poly-TPD (30 nm) / quantum dot light-emitting layer (20 nm) / ZnO (30nm) / silver (70 nm) / encapsulation film (9000 nm), wherein the material of the packaging film is PLA / SiO 2 -PLA blend film / SiO 2 / SiO 2 -PLA blend film / PLA composite film, the SiO 2The thickness of the film is 1000nm, the thickness of the two layers of PLA film is 3000nm, and the thickness of the two layers of SiO 2 -The thickness of the PLA blend film is 1000nm.

[0092] 2. The packaging method of the optoelectronic device comprises steps:

[0093] 1) Cast a 10 mg / ml PLA chloroform solution on the top surface of the silver electrode of the optoelectronic device to form a film, and then vacuum dry it at 0.8 Pa at 120 °C for 30 min to prepare a PLA film;

[0094] 2) Under alkaline conditions, SiO with a mass fraction of 20 wt% 2 The alcohol solution and lactic acid were reacted in a nitrogen atmosphere at a ratio of 1:1, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an encapsulation film, a preparation method thereof, and a photoelectric device, wherein the encapsulation film includes a first organic film stacked, a first blend film composed of a polymer and a ceramic material, and a first blend film composed of a ceramic material. ‑4 layers of ceramic membrane, a second blend membrane composed of polymer and ceramic material, a second organic thin film. In the present invention, the first organic film and the second organic film are used as the water vapor barrier layer, and the 1-4 layers of dense ceramic film are used as the oxygen barrier layer. The blended layer, the blended layer can effectively improve the bonding force between the organic film and the ceramic film, thereby enhancing the water and oxygen barrier performance of the packaging film, thereby meeting the water vapor permeability requirements of optoelectronic devices, and improving the use of optoelectronic devices life.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to an encapsulating film, a preparation method thereof, and an optoelectronic device. Background technique [0002] The service life of optoelectronic devices is a very important parameter. In order to improve the service life of optoelectronic devices and make them reach the commercial level, packaging is a crucial link. For optoelectronic devices, encapsulation is not only physical protection to prevent scratches, but more importantly, it is to prevent the penetration of water vapor and oxygen in the external environment. The penetration of water vapor or oxygen in these environments into the device will accelerate the aging of the device. Therefore, the packaging structure of photoelectric devices must have a good water and oxygen permeation barrier function. [0003] At present, the packaging technology of commercial optoelectronic devices is developing from the traditiona...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/56
CPCH01L33/56H01L2933/005
Inventor 朱佩曹蔚然
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products