Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Stable cleaning fluid used after chemical-mechanical polishing, and preparation method and application thereof

A cleaning solution and dismutase technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor copper-based chips, and achieve broad market application prospects, good selectivity, and anti-corrosion effects.

Inactive Publication Date: 2019-07-12
SHANGHAI SINYANG SEMICON MATERIALS
View PDF7 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to overcome the poor effect of existing cleaning solutions on cleaning copper-based chips and to prevent corrosion of copper-based chips, and to provide a stable cleaning solution after chemical mechanical polishing and its preparation method and application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Stable cleaning fluid used after chemical-mechanical polishing, and preparation method and application thereof
  • Stable cleaning fluid used after chemical-mechanical polishing, and preparation method and application thereof
  • Stable cleaning fluid used after chemical-mechanical polishing, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0034] In the following examples and comparative examples, the preparation method of the cleaning solution includes the following steps: mixing the raw materials. Said mixing usually involves adding the solid components of said raw material components into the liquid components and stirring evenly. The mixing temperature is room temperature. After the mixing, operations of shaking and filtering are also included. The purpose of the oscillation is to fully mix the raw material components, and the oscillation speed and time are not limited.

[0035] The reagents and raw materials used in the following examples and comparative examples are all commercially available.

[0036] In the following examples, those that do not limit the specific operating temperature all refer to carrying out at room temperature.

Embodiment 1-16

[0038]

[0039]

[0040]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a stable cleaning fluid used after chemical-mechanical polishing, and a preparation method and application thereof. The cleaning fluid comprises strong base, alcohol amine, anantioxidant enzyme, a corrosion inhibitor, a chelating agent, a surfactant and water. The cleaning fluid can be used for chemically and mechanically polished semiconductor devices, can realize the effects that corrosion to a copper-based chip is prevented, the roughness is reduced, the stability is high, and the cleaning effect is remarkably improved, and has a good industrial application value.

Description

technical field [0001] The invention relates to a stable cleaning solution after chemical mechanical polishing, its preparation method and application. Background technique [0002] Chemical mechanical polishing or planarization ("CMP") is a technique in semiconductor device manufacturing that removes material from the surface of a microelectronic device wafer so that the surface is polished (planarized). At present, the most widely used CMP technology is in the polishing of substrate silicon wafers in integrated circuits (IC) and ultra-large-scale integrated circuits (ULSI). It is generally believed in the world that when the feature size of the device is below 0.35 μm, global planarization must be carried out to ensure the accuracy of lithographic image transmission. [0003] However, impurities tend to be left on the surface of the semiconductor device after the CMP method. These impurities must be removed prior to subsequent processing of the semiconductor device in or...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23G1/18C23G1/20C23F3/04H01L21/02
CPCC23F3/04C23G1/18C23G1/20C23G1/205H01L21/02057
Inventor 王溯马丽史筱超
Owner SHANGHAI SINYANG SEMICON MATERIALS
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com