A substrate transfer mechanism, photolithography machine and substrate transfer method

Abstract

Disclosed are a substrate transfer mechanism, a photoetching machine and a substrate transfer method, wherein the substrate transfer mechanism comprises a base (1), a rotation driving unit (2), a lifting driving unit (4) and a substrate carrier (3). The rotation driving unit (2) is arranged on the base (1), the substrate carrier (3) is arranged on the rotation driving unit (2), the lifting driving unit (4) is located below the substrate carrier (3), and the lifting driving unit (4) rotates along with the substrate carrier (3). The lifting driving unit (4) comprises a lifting driving motor (45a), ejection pins (43a, 43b, 43c) and a lifting guiding module (44a), the lifting driving motor (45a) driving the ejection pins (43a, 43b, 43c) to pass through the substrate carrier (3) to perform lifting, and the lifting guiding module (44a) directing a lifting direction of the ejection pins (43a, 43b, 43c). The substrate transfer mechanism can realize a large-angle rotation of a substrate, and has high transfer precision and efficiency, high reliability, a compact structure, a small spatial occupied size, and almost has no transfer lifting redundant stroke and transfer impact risk, and has high transfer security.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a substrate transfer mechanism, a photolithography machine and a substrate transfer method. Background technique [0002] After experiencing the development stages of small-scale integration (SSI), medium-scale integration (MSI) and large-scale integration (LSI), integrated circuit manufacturing technology has now entered the stage of very large-scale integration (VLSI) and ultra-large-scale integration (ULSI). , The scale of integration has grown from a few transistors on a single substrate to tens of millions or even hundreds of millions of transistors on one substrate. The characteristic line width that marks the level of integrated circuit technology has also developed from tens of microns for small-scale integrated circuits to today's ultra-deep submicron (VDSM) level, and the diameter of the substrate has gradually changed from 2 inches, 3 inches, 4...

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