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A silicon oxide-based low dielectric constant microwave dielectric ceramic and its preparation method

A technology of microwave dielectric ceramics and low dielectric constant, which is applied in the field of low dielectric constant microwave dielectric ceramics and its preparation, can solve the problems of dielectric constant improvement, difficulty in preparing crack-free dense ceramics, etc., and achieve small resonant frequency temperature coefficient and low price cheap effect

Active Publication Date: 2022-01-18
SOUTH CHINA UNIV OF TECH
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Problems solved by technology

[0005] SiO 2 It is the ceramic material with the lowest dielectric constant (ε r ≈3.8), but SiO 2 There are a variety of high and low temperature crystal forms, and the transition from high temperature crystal form to low temperature crystal form will be accompanied by a large volume change, making it difficult to prepare crack-free dense ceramics. 2 Direct addition of sintering aids will cause a substantial increase in the dielectric constant

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  • A silicon oxide-based low dielectric constant microwave dielectric ceramic and its preparation method
  • A silicon oxide-based low dielectric constant microwave dielectric ceramic and its preparation method
  • A silicon oxide-based low dielectric constant microwave dielectric ceramic and its preparation method

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Embodiment Construction

[0027] The present invention will be further described in detail below with reference to the examples, but the embodiments of the present invention are not limited to the examples.

[0028] Table 3 is the chemical composition expression xZnO-yAl 2 O 3 -mSiO 2 -nSrTiO 3 The microwave dielectric properties table of dielectric ceramics, where x, y, m, n represent ZnO, Al, respectively 2 O 3 , SiO 2 , SrTiO 3 The molar ratio of x, y, m and n in each embodiment is shown in Table 3.

[0029] (1) Expression by chemical composition xZnO-yAl 2 O 3 -mSiO 2 The stoichiometric ratio of 99.9% pure ZnO, Al 2 O 3 , SiO 2 Raw material powder, planetary ball milling (solvent is alcohol, rotating speed is 300 rpm), pre-fired in air atmosphere after drying to obtain xZnO-yAl 2 O 3 -mSiO 2 Ceramic intermediate powder, the phase of which is figure 1 (0.64ZnO-0.09Al prepared in Example 1 2 O 3 -0.27SiO 2example) shown. Among them, the planetary ball mill is ball-milled in a ball...

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Abstract

The invention discloses a silicon oxide-based low-dielectric constant microwave dielectric ceramic and a preparation method, and the expression of its chemical composition is xZnO-yAl 2 O 3 ‑mSiO 2 ‑nSrTiO 3 , wherein 38mol%≤x≤64mol%, 6mol%≤y≤9mol%, 26mol%≤m≤50mol%, 0≤n≤7mol%, x+y+m+n=1. The preparation method includes the following steps: (1) preparation of ceramic intermediate powder; (2) xZnO-yAl 2 O 3 ‑mSiO 2 ‑nSrTiO 3 Preparation of ceramics. The dielectric constant of the microwave dielectric ceramic of the present invention is 6.4-8.2, the quality factor is greater than 9,346 GHz, and the resonant frequency temperature coefficient is small. The microwave dielectric ceramic of the present invention has great application value in industrial production activities related to the field of microwave communication.

Description

technical field [0001] The invention relates to a microwave dielectric ceramic material, in particular to a low dielectric constant microwave dielectric ceramic and a preparation method. Background technique [0002] In recent years, fifth-generation mobile communication technology (5G), autonomous driving technology, etc. all require devices to operate in higher frequency bands to provide wider bandwidths, so there is a large demand for high-performance materials at high frequencies. Microwave dielectric ceramics refer to the microwave dielectric ceramics in the microwave frequency range (frequency range 300MHz ~ 300GHz, wavelength 10 -3 Ceramics used as dielectric substrates, fillers, etc. in circuits of m to 1 m). It can be used in communication equipment such as mobile phones, TV satellites, radio frequency electronic tags (RFID) and military radars. In microwave equipment, reducing the dielectric constant of the substrate can improve the signal transmission rate, redu...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/14C04B35/622
CPCC04B35/453C04B35/14C04B35/622C04B2235/3217C04B2235/3418C04B2235/3236C04B2235/3213C04B2235/3284C04B2235/656C04B2235/6567C04B2235/6583C04B2235/96
Inventor 胡星黄新杰凌志远陈玉辉
Owner SOUTH CHINA UNIV OF TECH