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Metal wiring film, manufacturing method thereof and thin film transistor

A thin film transistor and metal wiring technology, applied in the field of electronic display, can solve the problems of increasing metal wiring film resistance, corrosion, affecting the quality of the display panel, etc., and achieves the effect of eliminating potential difference and avoiding electrolytic corrosion.

Inactive Publication Date: 2019-08-02
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existence of this potential difference causes the aluminum alloy film to be electrolytically corroded, thus destroying the integrity of the protective film, and at the same time increasing the resistance of the metal wiring film, which affects the quality of the display panel

Method used

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  • Metal wiring film, manufacturing method thereof and thin film transistor
  • Metal wiring film, manufacturing method thereof and thin film transistor

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Embodiment Construction

[0032] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., are only for reference The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar elements are denoted by the same reference numerals.

[0033] First, the prior art is briefly described. The wiring structure in the existing display panel generally includes a tin-doped indium oxide film (Indium Tin Oxide, ITO) and a metal wiring film located above the ITO film. The metal wiring film generally includes molybdenum-niobium alloy films (Mo-Nb) on both sides and aluminum-niobium alloy (Al-Nd) between the mol...

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Abstract

The invention provides a metal wiring film, a manufacturing method thereof and a thin film transistor. The metal wiring film comprises first, second and third film layers, the first film layer is madeof nickel-copper alloy in which the mass percent of nickel is between 30% and 70%, the second film layer is positioned on the first film layer, and made of aluminum-neodymium alloy in which the masspercent of neodymium is between 1% and 5%; and the third film layer is positioned on the second film layer and made of a material the same with that of the first film layer. The metal wiring film caneliminate a potential difference therein, and is avoided from electrolytic etching.

Description

technical field [0001] The invention relates to the field of electronic display, in particular to a metal wiring film, a manufacturing method thereof, and a thin film transistor. Background technique [0002] In order to realize transparent display, a common practice in the prior art is to use a transparent conductive film to form traces in thin film transistors of a display screen. The wiring structure in the existing display panel generally includes a tin-doped indium oxide film (Indium TinOxide, ITO) and a metal wiring film above the ITO film. The metal wiring film generally includes molybdenum-niobium alloy films (Mo-Nb) on both sides and aluminum-niobium alloy (Al-Nd) between the molybdenum alloy films. [0003] Since the unit impedance of molybdenum-niobium alloy and aluminum-niobium alloy is quite different, there is a potential difference between the aluminum-niobium alloy and the aluminum-niobium alloy on both sides. The existence of this potential difference caus...

Claims

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Application Information

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IPC IPC(8): H01L27/12
CPCH01L27/1214H01L27/124H01L27/1259
Inventor 木村徹
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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