Aln template and method for manufacturing light-emitting diode epitaxial wafer

Abstract

The invention discloses an AlN template and a method for manufacturing a light-emitting diode epitaxial wafer, belonging to the technical field of semiconductors. The manufacturing method includes: sequentially depositing multiple AlN sublayers on the substrate to obtain an AlN template, and gradually increasing the deposition temperature of the multiple AlN sublayers in the direction away from the substrate; wherein, sequentially depositing multiple AlN sublayers on the substrate The AlN sub-layer includes: after depositing an AlN sub-layer, interrupting the deposition of the AlN sub-layer; increasing the deposition temperature of the AlN sub-layer during the deposition interruption time after depositing an AlN sub-layer; depositing the next AlN sub-layer. The manufacturing method provided by the invention can improve the uniformity of the formed AlN thin film, reduce the compressive stress in the AlN thin film, and improve the luminous efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AlN template and a method for manufacturing a light-emitting diode epitaxial wafer. Background technique [0002] In recent years, light emitting diodes (Light Emitting Diode, LED for short), as a new generation of green light sources, are being widely used in lighting, backlight, display, indication and other fields. [0003] The epitaxial wafer is the main component of the LED, and the existing GaN-based LED epitaxial wafer includes a sapphire substrate and a GaN epitaxial layer grown on the sapphire substrate. Since there are lattice mismatch and thermal mismatch problems between sapphire and GaN materials, and there is only a small lattice mismatch between AlN materials, GaN materials and sapphire substrates, AlN thin films are often placed as buffer layers in between sapphire substrate and GaN. [0004] In the process of realizing the present invention, the inven...

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Problems solved by technology

[0005] Existing AlN films are usually grown under low temperature and constant temperature conditions, which may lead to uneven thickness of the grown AlN film, thereby affecting the crystal quality of the GaN epitaxial layer grown on it and reducing the luminous efficiency of LEDs

At the same time, due to the compressive stress between the AlN and GaN epitaxial layers, the AlN film will warp, and the higher the deposition temperature of the AlN film, the more serious the warping of the AlN film

Therefore, if the AlN film is grown at high temperature and constant temperature, the matching between the AlN layer and the subsequent GaN epitaxial layer will be poor, the wavelength uniformity of the epitaxial wafer will be worse, and the luminous efficiency of the LED will be lower.

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