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Quantum dot complex and preparation method thereof, and light emitting device and preparation method thereof

A technology for light-emitting devices and composites, which can be used in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., and can solve problems such as exciton quenching

Active Publication Date: 2019-08-06
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the embodiments of the present invention is to provide a quantum dot composite and its preparation method, a light-emitting device and its preparation method, which solves the problem that the excitons formed by electrons and holes are easily trapped at the interface between the light-emitting layer and the electron transport layer. Quenching problem, thereby improving the performance of quantum dot light-emitting diodes

Method used

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  • Quantum dot complex and preparation method thereof, and light emitting device and preparation method thereof
  • Quantum dot complex and preparation method thereof, and light emitting device and preparation method thereof
  • Quantum dot complex and preparation method thereof, and light emitting device and preparation method thereof

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no. 1 example

[0052] figure 1 It is a schematic diagram of the structure of the quantum dot composite of the embodiment of the present invention. like figure 1 As shown, the quantum dot composite of the embodiment of the present invention includes a core-shell quantum dot 1 and an electron transport material layer 2 arranged outside the core-shell quantum dot 1. The electron transport material layer 2 wraps part of the core-shell quantum dot 1 and wraps the other A part of the core-shell quantum dots 1 is exposed.

[0053] like figure 1 As shown, the core-shell quantum dot 1 includes a core material 101 and a shell material 102 wrapping the core material 101. The core material 101 includes cadmium selenide, cadmium sulfide, or indium phosphide. The core-shell quantum dot 1 in the embodiment of the present invention uses cadmium selenide (CdSe) as the core material 101 and zinc sulfide (ZnS) as the shell material 102 .

[0054] like figure 1 As shown, the material of the electron transp...

no. 2 example

[0068] Figure 8 It is a schematic structural diagram of a light emitting device according to the second embodiment of the present invention. like Figure 8 As shown, based on the technical concept of the foregoing embodiments, the present invention also provides a light-emitting device, including a substrate 6, a light-emitting layer 7 disposed on the substrate 6, an electron transport layer 9, and a light-emitting layer between the light-emitting layer 7 and the electron transport layer 9. The interfacial layer 8 includes the aforementioned quantum dot composite. Wherein, the electron transport material layer of the quantum dot composite in the interface layer 8 is located on the side away from the light-emitting layer 7 of the core-shell quantum dots of the quantum dot composite.

[0069] The light-emitting device of the embodiment of the present invention forms an interface layer through the quantum dot composite, which solves the problem that the excitons formed by elec...

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Abstract

The embodiment of the invention provides a quantum dot complex and a preparation method thereof, and a light emitting device and a preparation method thereof. The quantum dot complex comprises core-shell quantum dots and an electron transport material layer arranged outside the core-shell quantum dots. The electron transport material layer wraps one part of the core-shell quantum dots and exposesthe other part of the core-shell quantum dots. The problem that excitons formed by electrons and holes are easily quenched at the interface of the light emitting layer and the electron transport layeris solved, and the performance of quantum dot light emitting diodes is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a quantum dot compound and a preparation method thereof, a light-emitting device and a preparation method thereof. Background technique [0002] Quantum dots are an important low-dimensional semiconductor material, whose size in three dimensions is not larger than twice the exciton Bohr radius of the corresponding semiconductor material. Quantum dots are generally spherical or quasi-spherical, and their diameters are usually between 2-20nm. As a new type of luminescent material, quantum dots (QD) have the advantages of high light color purity, high luminous quantum efficiency, adjustable luminous color, and long service life. It has become a research hotspot for new LED luminescent materials. Therefore, quantum dot light-emitting diodes (QLEDs) using quantum dot materials as the light-emitting layer have become the main direction of research on new display devices. [0003] Qu...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 梅文海
Owner BOE TECH GRP CO LTD