Preparation method of controllable Cl-doped perovskite thin film

A perovskite and thin film technology, which is applied in the field of preparation of perovskite thin films, can solve problems such as poor photoelectric performance, microscopic holes and lattice defects of perovskite thin films, and achieve high density, high crystallinity, and large crystals. effect of particle size

Inactive Publication Date: 2019-08-16
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of many microscopic holes and lattice defects and poor photoelectric performance of the perovskite film prepared by the existing method, and provide a method for preparing a controllable Cl-doped perovskite film

Method used

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  • Preparation method of controllable Cl-doped perovskite thin film
  • Preparation method of controllable Cl-doped perovskite thin film
  • Preparation method of controllable Cl-doped perovskite thin film

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specific Embodiment approach 1

[0044] Embodiment 1: This embodiment is a method for preparing a controllable Cl-doped perovskite film, which is completed in the following steps:

[0045] 1. Cleaning of FTO conductive glass:

[0046] The FTO conductive glass is ultrasonically cleaned in toluene, acetone, absolute ethanol and deionized water in sequence, and then dried with nitrogen to obtain the cleaned FTO conductive glass;

[0047] 2. Preparation of precursor solution:

[0048] PbI 2 and PbCl 2 Add it to the mixed solution of DMF and DMSO, then stir the reaction at a constant temperature, and then use a filter membrane to filter the solution to obtain a Pb-based precursor;

[0049] PbI as described in step two 2 The volume ratio of the mass of DMF and the mixed solution of DMSO is (346mg~500mg):(1.0mL~1.2mL);

[0050] PbI as described in step two 2 with PbCl 2 The molar ratio is 1:(0.2~1);

[0051] 3. PbI 2-x Cl x Film preparation:

[0052] Add the Pb-based precursor solution dropwise to the cle...

specific Embodiment approach 2

[0065] Embodiment 2: This embodiment differs from Embodiment 1 in that: the time for ultrasonic cleaning in step 1 is 15 minutes to 60 minutes, and the power of ultrasonic cleaning is 800W to 1400W. Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0066] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the size of the FTO conductive glass described in step 1 is 2 cm×1.5 cm. Other steps are the same as those in Embodiment 1 or 2.

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Abstract

The invention discloses a preparation method of a controllable Cl-doped perovskite thin film. The invention relates to a preparation method of a perovskite thin film, and aims to solve the problems that the perovskite thin film prepared by the existing method has many microscopic holes and lattice defects and is poor in photoelectric property. The method comprises the following steps: 1, cleaningFTO conductive glass; 2, preparing a precursor solution; 3, preparing a PbI<2-x>Clx thin film; and 4, preparing the CH3NH3PbI<3-x>Clx thin film, namely, the controllable Cl-doped perovskite thin film.The invention discloses the preparation method of the controllable Cl-doped perovskite thin film.

Description

technical field [0001] The invention relates to a preparation method of a perovskite thin film. Background technique [0002] Organic-inorganic hybrid perovskite materials belong to a new type of composite crystal material with unique optical, electrical and magnetic properties and formed by self-assembly of small organic molecules and inorganic molecules. This structure of organic components and inorganic components stacked alternately makes it not only have the mechanical stability and thermal stability of inorganic components, but also has the easy processability and photoelectric functionality of organic components. Organic-inorganic hybrid perovskite materials are widely used in solar cells due to their excellent properties such as strong light absorption, adjustable band gap, bipolar charge transport, high carrier mobility, and high defect tolerance; Because of its outstanding photoelectric properties and photoluminescence properties, it is widely used in light-emitti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/42H01L51/48H01L51/56H01L51/40
CPCC03C17/42C03C2217/286C03C2217/285C03C2218/116C03C2218/32H10K71/12
Inventor 姚忠平李杰李东琦夏琦兴张志荣姜兆华
Owner HARBIN INST OF TECH
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