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Thick-film combination material chip high-throughput preparation method based on multisource plasma spraying and laser aftertreatment

A technology of combining material chips and plasma, applied in metal material coating process, coating, melting spray plating, etc., can solve the problems of long cycle and high cost, and achieve exponential speed increase, cost reduction, and rapid and continuous preparation. Effect

Active Publication Date: 2019-08-16
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The main purpose of this application is to provide a high-throughput preparation method for thick-film composite material chips based on multi-source plasma spraying and laser post-treatment to solve the problems of high cost and long cycle of traditional material preparation

Method used

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  • Thick-film combination material chip high-throughput preparation method based on multisource plasma spraying and laser aftertreatment
  • Thick-film combination material chip high-throughput preparation method based on multisource plasma spraying and laser aftertreatment
  • Thick-film combination material chip high-throughput preparation method based on multisource plasma spraying and laser aftertreatment

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Embodiment 1

[0034] A method for high-throughput preparation of thick-film composite material chips based on multi-source plasma spraying and laser post-treatment, comprising the following steps:

[0035] (1) Pre-preparing composite material chips whose composition changes continuously along the direction of the substrate surface with multi-station plasma spraying equipment:

[0036] 1a. Select the pure metal powder of the component elements of the combined material chip to be prepared; select the base material of the combined material chip; wherein, the base material of the combined material chip is a pure metal plate having the same main component elements as the combined material chip;

[0037] 1b. Sandblasting the surface of the base material, cleaning the base material with acetone solution and ethanol solution, and then putting it into a drying oven to dry; wherein, the drying temperature is 160-200°C, and the drying time is 1.5-2.5h;

[0038] 1c. Pour the pure metal powder into the ...

Embodiment 2

[0054] A method for high-throughput preparation of thick-film composite material chips based on multi-source plasma spraying and laser post-treatment, comprising the following steps:

[0055] (1) Pre-preparing composite material chips whose composition changes continuously along the direction of the substrate surface with multi-station plasma spraying equipment:

[0056] 1a. Select the pure metal powder of the component elements of the combined material chip to be prepared. If the high-energy wear-resistant NiAl material is screened, then select pure nickel powder with a purity higher than 99.99%, and pure aluminum powder with a purity higher than 99.99%; select the combined material chip Substrate, which requires a pure metal plate with the same main constituent elements as the chip;

[0057] 1b. Sandblast the surface of the substrate, wash the substrate with acetone solution and ethanol solution, and then put it in a drying oven to dry; wherein, the drying temperature is 180...

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Abstract

The invention discloses a thick-film combination material chip high-throughput preparation method based on multisource plasma spraying and laser aftertreatment. The thick-film combination material chip high-throughput preparation method comprises the following steps of first, using a multi-station plasma spraying device to prepare a combination material chip with ingredients changing continuouslyin the surface direction of a substrate beforehand; second, using a high-energy laser device to carry out aftertreatment on the combination material chip to enable the ingredients of the combination material chip to be alloyed; and third, carrying out cutting, representation and screening on the combination material chip to obtain a product. With the thick-film combination material chip high-throughput preparation method based on multisource plasma spraying and laser aftertreatment, the problem that traditional material research and development are high in cost and long in period is solved.

Description

technical field [0001] The present application relates to the field of metal material composite chips, in particular, to a high-throughput preparation method for thick film composite material chips based on multi-source plasma spraying and laser post-treatment. Background technique [0002] Material innovation is not only the core element of developing various disruptive technologies, but also the cornerstone of modern high-end manufacturing and the carrier of technological development. However, the speed of traditional material research and development based on "trial and error" can no longer meet the needs of the current society. Therefore, there is an urgent need to develop rapid and effective means of research and development of new materials. The high-throughput preparation of thin-film composite chips based on magnetron sputtering has been relatively mature, but the preparation of thick films with higher melting points has not yet appeared, so the preparation technolog...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C4/134C23C4/18C23C24/10
CPCC23C4/18C23C24/103C23C4/134
Inventor 贾延东徐龙王刚穆永坤张靓博易军黄波
Owner SHANGHAI UNIV
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