Multistable magnetic control memristor equivalent analog circuit

An equivalent simulation and memristor technology, applied in CAD circuit design, instruments, electrical and digital data processing, etc. problem, to achieve the effect of simple structure

Active Publication Date: 2019-08-20
SHANDONG UNIV OF SCI & TECH
View PDF9 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003]Currently, the reported memristor simulation models include PSPICE simulation model and hardware equivalent circuit of simulated memristor. On the one hand, the principles of these two types of memristor models are complex , difficult to realize in practice; on the other hand, it is difficult for these two types of memristors to accurately simulate the characteristics of actual memristors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multistable magnetic control memristor equivalent analog circuit
  • Multistable magnetic control memristor equivalent analog circuit
  • Multistable magnetic control memristor equivalent analog circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0021] The theoretical starting point of the present invention is the definition expression of generalized memristor:

[0022]

[0023] Such as figure 1 As shown, an equivalent analog circuit of a multistable magnetron memristor, including a resistor network, a voltage follower, an inverting integrator, an inverting scaler, an operational amplifier and a multiplier;

[0024] a voltage follower configured to equalize the output voltage to the input voltage;

[0025] an inverting integrator configured to implement an integral operation on the input voltage;

[0026] An inverting scaler, configured to realize that the output voltage and the input voltage are in a proportional operation relationship and inverting; including a first inverting scaler U2 and a third inverting scaler U4;

[0027] A multiplier configured to multiply signals at two ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a multi-steady-state magnetic control memristor equivalent analog circuit, and belongs to the technical field of circuit design. According to the invention, the volt-ampere characteristic of the generalized memristor is realized by using the analog circuit; the integrated operational circuit is used for realizing corresponding operation in the characteristics of the memristor, the voltage follower is used for realizing that an output voltage is equal to an input voltage, the inverting integrator is used for realizing integral operation on the input voltage, and the inverting proportioner is used for realizing that the output voltage and the input voltage are in a proportional operation relationship and are inverted; and the multiplication circuit is used for realizing multiplication of input signals from two ends. The multi-steady-state magnetic control memristor is simple in structure, can replace an actual generalized memristor to realize memristor-related circuit design, experiment and application, and is of great significance to the characteristic and application research of the memristor.

Description

technical field [0001] The invention belongs to the technical field of circuit design, and in particular relates to an equivalent analog circuit of a multi-stable magnetron memristor. Background technique [0002] Memristor is the fourth basic circuit element after resistance, capacitance and inductance. It describes the relationship between magnetic flux and charge, and has characteristics that cannot be copied by any combination of the other three basic circuit elements. It is a kind of Non-linear resistance with memory function. In 1971, Chua theoretically predicted the existence of memristor elements according to the completeness theorem of basic circuit variable combinations. It was not until 2008 that Hewlett-Packard Labs made a physical TiO2 memristor for the first time. Memristors can remember the amount of charge flowing through it, which makes it a natural non-volatile memory. The emergence of memristors has made integrated circuit components small and portable. A...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/30
Inventor 李玉霞邓玥
Owner SHANDONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap