Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method and application of ⅱ-ⅲ-ⅴ-ⅵ alloy quantum dots

A quantum dot, II-III-V-VI technology, applied in chemical instruments and methods, nanotechnology for materials and surface science, luminescent materials, etc., can solve the problem of narrow half-peak width and difficult Alloy quantum dots, it is difficult to avoid Ⅲ-Ⅴ separate nucleation and other problems

Active Publication Date: 2021-07-27
NANJING TECH CORP LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this preparation method, although II-VI molecular clusters are formed in situ or in advance, it is still necessary to add III precursors and V precursors, and it is still difficult to avoid the independent nucleation of III-V
Therefore, this preparation method is still difficult to form alloy quantum dots with uniform size and composition, and the half-width of the product is more than 50nm, which cannot meet the requirements of narrow half-width in the new display field.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of ⅱ-ⅲ-ⅴ-ⅵ alloy quantum dots
  • Preparation method and application of ⅱ-ⅲ-ⅴ-ⅵ alloy quantum dots
  • Preparation method and application of ⅱ-ⅲ-ⅴ-ⅵ alloy quantum dots

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] The preparation method of II-III-V-VI alloy quantum dot provided by the present invention comprises:

[0034] (1) The first precursor containing elements of subgroup II, the second precursor containing elements of main group III, the third precursor containing elements of main group V, and the fourth precursor containing elements of main group VI The body and the ligand are mixed to form a precursor solution A, and the precursor solution A is heated so that the precursor solution A reacts to form a II-III-V-VI nanocluster complex solution;

[0035] (2) Mix and heat the II-III-V-VI nanocluster complex solution with an activator to react to obtain II-III-V-VI alloy quantum dots.

[0036] In step (1), the precursor solution A can undergo preliminary reactions during the heating process, including the preliminary reaction of the highly active third precursor and the second precursor to nucleate to form III-V monomers, the first precursor, the fourth Precursors and ligands ...

Embodiment 1

[0067] 0.3 mmol In(Ac) 3 (Indium acetate), 0.6mmol Zn(Ac) 2 (zinc acetate), 2.1 mmol hexadecanoic acid and 12 mLODE (octadecene) were added to a 100 mL three-necked flask, and the three-necked flask was placed under N 2Heated to 180°C under exhausted state, kept at 180°C for 30min, then lowered to 30°C, and then added 0.15mmol TMS-P (tris(trimethylsilyl)phosphorus), 0.3mmol S-ODE and 1.5mmol TOP (trimethylsilicon) octylphosphine) to form a precursor solution A, and then the temperature was raised to 50° C. for 30 min to form an InZnPS nanocluster complex solution, which was lowered to room temperature for use. like figure 1 As shown, the InZnPS nanocluster complex solution began to lift at 400 nm in the UV absorption spectrum, but there was no obvious exciton peak, as shown in figure 2 As shown, the transmission electron microscope (TEM) shows that the InZnPS nanoclusters are about 1 nm, indicating that the crystallization is incomplete and the nanocluster composite struct...

Embodiment 2

[0071] 0.3 mmol In(Ac) 3 , 0.3mmol Zn(Ac) 2 , 1.5mmol hexadecanoic acid and 12mL ODE were added to a 100mL three-necked flask, and the three-necked flask was placed in N 2 Heated to 180°C under exhausted state, kept at 180°C for 30 min, then lowered to 30°C, and then added 0.3 mmol TMS-P, 0.6 mmol S-ODE and 3 mmol TBP (tributylphosphine) to form precursor solution A, and then The temperature was raised to 80° C. for 30 min to form an InZnPS nanocluster complex solution, which was cooled to room temperature for use.

[0072] 15mL of octadecene was added to a 50mL three-necked flask, and the three-necked flask was placed in N 2 The mixture was heated to 250°C in the exhausted state, injected with a mixture of InZnPS nanocluster complex solution containing 0.15mmol In element and 15mmol of dioctylamine, and kept at 250°C for 10min to obtain an InZnPS alloy quantum dot solution. Fluorescence emission and transmission electron microscopy tests were performed on the InZnPS alloy ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
full width at half maximumaaaaaaaaaa
particle sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a method for preparing II-III-V-VI alloy quantum dots and its application. The preparation method comprises: (1) preparing a first precursor containing a subgroup II element and a main group element containing III The second precursor containing the V main group element, the third precursor containing the V main group element, the fourth precursor containing the VI main group element and the ligand are mixed to form a precursor solution A, and the precursor solution A is heated to make the precursor Solution A reacts to form II‑III‑V‑VI nanocluster complex solution; (2) mixes II‑III‑V‑VI nanocluster complex solution with an activator to react to obtain II‑III‑V‑VI alloy quantum dots. In the present invention, four precursors with different activities are reacted to form II-III-V-VI nano-cluster complexes with mild reactivity, and then mixed with an activator, and the formation of II-III-V-VI quantum dots is regulated by the activator. Nuclear growth rate and energy band structure, so as to obtain Ⅱ-Ⅲ-Ⅴ-Ⅵ alloy quantum dots with uniform size and composition and few luminescent defects. The Ⅱ-Ⅲ-Ⅴ-Ⅵ alloy quantum dots have narrow fluorescence half-peak width and high quantum efficiency , can be better applied to optoelectronic devices.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a preparation method and application of II-III-V-VI alloy quantum dots. Background technique [0002] In the synthesis of Ⅲ-Ⅴ quantum dots such as InP, due to the strong activity of V precursors such as P, it is easy to lead to uneven crystal growth, wider size distribution of Ⅲ-Ⅴ quantum dots and wider fluorescence emission peaks. In addition, due to the non-radiative exciton relaxation process and unsaturated dangling bonds, the quantum efficiency of intrinsic III-V quantum dots is only about 1%. In order to improve the fluorescence quantum yield of Ⅲ-Ⅴ quantum dots, a layer of Ⅱ-Ⅵ element shell with wider band gap can be coated on the Ⅲ-Ⅴ quantum dot core to form Ⅲ-Ⅴ / Ⅱ-Ⅵ core-shell quantum dots , to increase the quantum efficiency of III-V / II-VI core-shell quantum dots to about 40%. However, the III-V / II-VI core-shell quantum dots prepared by this method have disadvanta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/02C09K11/70C09K11/88B82Y20/00B82Y30/00
CPCB82Y20/00B82Y30/00C09K11/02C09K11/703C09K11/883
Inventor 乔培胜陈小朋高静
Owner NANJING TECH CORP LTD