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Gallium oxide field effect transistor and preparation method thereof

A technology of gallium oxide field and gallium oxide, applied in the field of gallium oxide field effect transistor and its preparation, can solve the problems of low breakdown voltage and conduction characteristics, improve the breakdown characteristics, maintain the conduction characteristics, and improve the breakdown Effects of Features

Active Publication Date: 2019-08-23
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, an embodiment of the present invention provides a preparation method and structure of a gallium oxide field effect transistor to solve the problem of Ga 2 o 3 The breakdown voltage and conduction characteristics of field effect transistor (FET) devices are much lower than the expected value of the material

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  • Gallium oxide field effect transistor and preparation method thereof
  • Gallium oxide field effect transistor and preparation method thereof
  • Gallium oxide field effect transistor and preparation method thereof

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Embodiment Construction

[0045] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings and in combination with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0046] refer to figure 1 with figure 2 , figure 1 It is a schematic flow chart of the preparation method of gallium oxide field effect transistor provided by the embodiment of the present invention, figure 2 It is a schematic cross-sectional structure diagram corresponding to the preparation method of the gallium oxide field effect transistor provided in the embodiment of the present invention. The preparation method of the gallium oxide field effect transistor may include:

[0047] Step S101, epitaxial n-type gallium oxide channel layer on the substrate.

[0048] Op...

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Abstract

The invention relates to the field of semiconductors, and especially relates to a gallium oxide field effect transistor and a preparation method thereof. The method comprises the steps of epitaxiallygrowing an n-type gallium oxide channel layer on a substrate; respectively forming a source electrode and a drain electrode on the n-type gallium oxide channel layer; growing a dielectric layer on thesource electrode, the drain electrode and the n-type gallium oxide channel layer; removing the part corresponding to a grid region in the dielectric layer, and carrying out high-temperature annealingtreatment containing at least two temperatures; and preparing a grid electrode on the n-type gallium oxide channel layer in an area corresponding to the grid region. The method of the invention can improve the breakdown characteristics of the device and keep the conduction characteristics of the device unchanged.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a gallium oxide field effect transistor and a preparation method thereof. Background technique [0002] Power electronic devices are mainly used for power change and circuit control of power equipment, and are the core devices for power (power) processing. At present, environmental and resource issues around the world are facing severe challenges. Countries have successively promulgated energy conservation and emission reduction policies. As the core device for power control and conversion of industrial facilities, household appliances and other equipment, the power semiconductor industry will face new technical challenges and development opportunities. Silicon-based semiconductor devices are currently the most commonly used power devices in power systems. Their performance has been quite perfect and is close to the theoretical limit determined by their material properties, making t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/34H01L21/477H01L29/78H01L29/06
CPCH01L21/477H01L29/0611H01L29/66969H01L29/78
Inventor 吕元杰王元刚周幸叶付兴昌宋旭波田秀伟梁士雄冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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