Gallium oxide field-effect transistor and fabrication method thereof

A technology of gallium oxide field and gallium oxide is applied in the field of gallium oxide field effect transistor and its preparation, which can solve the problems of low breakdown voltage and conduction characteristics, so as to improve the breakdown characteristics, improve the breakdown characteristics, and maintain conduction. Effects of Features

Active Publication Date: 2019-09-10
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
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  • Application Information

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Problems solved by technology

[0006] In view of this, an embodiment of the present invention provides a preparation method and structure of a gallium oxide field effect transistor to solve the pro

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  • Gallium oxide field-effect transistor and fabrication method thereof
  • Gallium oxide field-effect transistor and fabrication method thereof
  • Gallium oxide field-effect transistor and fabrication method thereof

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Embodiment Construction

[0046] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings and in combination with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0047] refer to figure 1 and figure 2 , figure 1 It is a schematic flow chart of the preparation method of gallium oxide field effect transistor provided by the embodiment of the present invention, figure 2It is a schematic cross-sectional structure diagram corresponding to the preparation method of the gallium oxide field effect transistor provided in the embodiment of the present invention. The preparation method of the gallium oxide field effect transistor may include:

[0048] Step S101, epitaxial n-type gallium oxide channel layer on the substrate.

[0049] Opti...

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Abstract

The invention relates to the field of semiconductors, in particular to a gallium oxide field-effect transistor and a fabrication method thereof. The method comprises the steps of epitaxially growing an n-type gallium oxide channel layer on a substrate; forming a source and a drain on the n-type gallium oxide channel layer; growing a first dielectric layer on the source, the drain and the n-type gallium oxide channel layer; removing a part, corresponding to a first preset region, in the first dielectric layer, and performing high-temperature annealing processing comprising at least two temperatures, wherein the preset region intersects with a gate region, and an edge near to one side of the drain is arranged in a second preset region arranged between the gate region and the drain; removingthe remaining first dielectric layer, and growing a second dielectric layer on the source, the drain and the n-type gallium oxide channel layer; and fabricating a gate on the second dielectric layer corresponding to the gate region. By the method, the breakdown characteristic of the device can be improved, and the unchanged conduction characteristic of the device is maintained.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a gallium oxide field effect transistor and a preparation method thereof. Background technique [0002] Power electronic devices are mainly used for power change and circuit control of power equipment, and are the core devices for power (power) processing. At present, environmental and resource issues around the world are facing severe challenges. Countries have successively promulgated energy conservation and emission reduction policies. As the core device for power control and conversion of industrial facilities, household appliances and other equipment, the power semiconductor industry will face new technical challenges and development opportunities. Silicon-based semiconductor devices are currently the most commonly used power devices in power systems. Their performance has been quite perfect and is close to the theoretical limit determined by their material properties, making t...

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Application Information

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IPC IPC(8): H01L21/34H01L29/78H01L29/24H01L29/10H01L29/06H01L21/477
CPCH01L21/477H01L29/0615H01L29/1054H01L29/24H01L29/66969H01L29/78
Inventor 吕元杰王元刚周幸叶付兴昌宋旭波田秀伟梁士雄冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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