Silicon wafer treatment method, detection method and treatment device

Abstract

The invention provides a silicon wafer treatment method, a detection method and a treatment device. The treatment method comprises the following steps: atomizing a copper nitrate solution into atomized gas, and spraying the atomized gas onto the surface of a silicon wafer to be treated; drying the surface of the silicon wafer; and performing thermal treatment on the dried silicon wafer to form decorations at defective positions on the surface of the silicon wafer. According to the silicon wafer treatment method provided by the invention, the copper nitrate solution is atomized into the atomized gas, the atomized gas is sprayed onto the surface of the silicon wafer to be treated, the surface of the silicon wafer is dried, and thermal treatment is performed on the dried silicon wafer in order to form the decorations at the defective positions on the surface of the silicon wafer. Through adoption of the method, the uniformity of the metal decorations can be improved greatly, and the amount of metal pollution can be controlled effectively. Moreover, only a trace amount of metal solution is used, thereby avoiding waste and heavy metal pollution. Furthermore, the method avoids direct contact with people, so that the security is enhanced. In addition, the surface of the silicon wafer is easy to dry; copper distribution is uniform; and the surface defect observation and detection accuracy of the silicon wafer is improved.

Description

technical field [0001] The invention relates to the field of silicon wafer detection, in particular to a silicon wafer processing method, detection method and processing device. Background technique [0002] Nowadays, a detection method for crystal origin defects (COP) on the surface of Czochralski monocrystalline silicon wafers, especially large-size monocrystalline silicon wafers (diameter 300mm and above) is the copper embellishment method, which uses heavy metal copper to embellish and Amplify the defects in the silicon wafer for subsequent observation and analysis, and detect tiny defects at the nanometer level by embellishing the surface of the silicon wafer with copper. During the implementation of the method, the polished single crystal silicon wafer is directly dipped into the copper nitrate solution, and then the amount of heavy metal pollution on the surface is controlled by the time and temperature of the dipping, and the pollution amount is about 1×10 12 to 1×1...

AI Technical Summary

Problems solved by technology

[0004] In view of this, the present invention provides a processing method, a detection method and a processing device for silicon wafers, which are used to solve the problem that the amount of copper nitrate solution on the surface of silicon wafers is not easy to control, resulting in waste and a large amount of copper discharge pollution, uneven distribution of copper, and affecting silicon. Problems in Accuracy of Surface Defect Observation and Detection

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