Visible light broadband perfect absorber based on semiconductor metasurface
A visible light and metasurface technology, applied in the optical field, can solve the problems of narrow absorption bandwidth and rare research on dielectric broadband perfect absorbers, and achieve the effect of reducing manufacturing cost, overcoming ohmic loss and thermal instability, and having a simple structure.
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[0042] Example 1
[0043] A broadband visible light absorber based on a semiconductor metasurface, comprising a metal reflective layer 1 and a dielectric layer 2 . The material of the metal reflection layer 1 is gold, and the thickness t is 100 nanometers. The material of the dielectric layer 2 is silicon, and the thickness h is 50 nanometers to 80 nanometers.
[0044] In order to prepare the above-mentioned absorber, first, the ion beam sputtering deposition method was used on the upper surface of the sapphire substrate to deposit a gold film with a thickness of 100 nanometers as the metal reflective layer 1, and the ion beam sputtering deposition method was used on the surface of the metal reflective layer 1. method, depositing a silicon film with a thickness of 70 nanometers as the dielectric layer 2, and then using the focused ion beam lithography method to etch the dielectric layer 2 to obtain the structure of the rhombus resonator 22, as shown in figure 1 shown.
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