Zinc-doped Ag-In-S quantum dot luminescent material and preparation method and application thereof

A quantum dot light-emitting, ag-in-s technology, applied in the direction of light-emitting materials, nanotechnology for materials and surface science, photosensitive equipment, etc., can solve the problem of hindering injection, restricting the development and application of quantum dot light-emitting materials, Zn doping The preparation steps of Ag-In-S quantum dots are cumbersome and other problems

Pending Publication Date: 2021-05-18
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above core/shell structure quantum dots introduce a wide bandgap material ZnS, and use the overgrowth of ZnS to form a quasi-type I core/shell structure to eliminate surface defects, thereby greatly improving the performance of AIS (CIS) sensitized QDSCs, making it power conversion The efficiency is comparable to or even better than that of heavy metal binary quantum dots, but the shell of the core/shell structure also hinders the injection of electrons

Method used

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  • Zinc-doped Ag-In-S quantum dot luminescent material and preparation method and application thereof
  • Zinc-doped Ag-In-S quantum dot luminescent material and preparation method and application thereof
  • Zinc-doped Ag-In-S quantum dot luminescent material and preparation method and application thereof

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Embodiment 1

[0028] A kind of zinc-doped Ag-In-S quantum dot luminescent material AISZ (0.2), its Zn 2+ The doping amount Zn / (Ag+In)=20%. The preparation method of the quantum dot luminescent material comprises the following steps:

[0029] 1) Accurately weigh the following raw materials according to the stoichiometric ratio of Ag-In-S quantum dots Ag / In / S=1:3:4: 0.2mmol silver acetate, 0.6mmol indium acetate, and 0.8mmol sulfur powder. Dissolve the weighed sulfur powder in 1.2 mL oleylamine to obtain a sulfur precursor solution. In addition, according to the doping ratio of Zn / (Ag+In)=20%, 0.16 mmol of zinc acetate was accurately weighed.

[0030] 2) Add the weighed silver acetate, indium acetate and zinc acetate together with 16mL 1-octadecene and 8.0mL oleylamine into a 50mL three-neck flask, mix well and heat to 180°C under the protection of argon. Inject the sulfur precursor solution into the system and keep it warm for about 20 minutes. After the system was cooled to room tempera...

Embodiment 2

[0032] The preparation method of this embodiment and embodiment 1 is roughly the same, the difference is: Zn 2+ The doping amount Zn / (Ag+In)=5%, that is, the raw materials are adjusted to 0.2mmol silver acetate, 0.6mmol indium acetate, 0.8mmol sulfur powder, and 0.04mmol zinc acetate. The target sample thus prepared is AISZ(0.05) quantum dots.

Embodiment 3

[0034] The preparation method of this embodiment and embodiment 1 is roughly the same, the difference is: Zn2+ The doping amount Zn / (Ag+In)=10%, that is, the raw materials are adjusted to 0.2mmol silver acetate, 0.6mmol indium acetate, 0.8mmol sulfur powder, and 0.08mmol zinc acetate. The target sample thus prepared is AISZ(0.1) quantum dots.

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Abstract

The invention relates to a zinc-doped Ag-In-S quantum dot luminescent material and a preparation method and application thereof. The preparation method comprises the following steps: firstly, preparing silver acetate, indium acetate, powdered sulfur and zinc acetate according to a stoichiometric ratio, then mixing the silver acetate, the indium acetate, the zinc acetate and a certain amount of 1-octadecene and oleylamine, heating to 160-200 DEG C, adding a sulfur precursor solution formed by mixing the powdered sulfur and the oleylamine, carrying out heat preservation reaction for a period of time, and obtaining the Ag-In-S quantum dot luminescent material with the doping amount of 5%-30%. The quantum dot luminescent material prepared by the method is spheroidic, the average diameter is (5.0 +/-0.5) nm, the absorption intensity is higher, the quantum dot luminescent material has high luminescent intensity from visible light to near-infrared light, the fluorescent quantum yield is increased from 8.34% to 32.90% due to doping of Zn < 2 + >, the power conversion efficiency is also improved, and the material has a good application prospect in the field of quantum dot sensitized solar cells.

Description

technical field [0001] The invention relates to the technical field of luminescent materials, in particular to a zinc-doped Ag-In-S quantum dot luminescent material and a preparation method and application thereof. Background technique [0002] Quantum dots (QDs), as an emerging material in the field of optoelectronics, have received high attention and have been widely used due to their unique photophysical properties such as high absorption coefficient, tunable bandgap, and high fluorescence quantum yield. In light-emitting diodes, photocatalysis, biological imaging and solar cells and other fields. Quantum dots can be used as excellent light absorbers for liquid junction sensitized solar cells (QDSCs), because their built-in dipole moment is conducive to carrier separation and multi-exciton generation, which can greatly improve Power conversion efficiency (power conversion efficiencies, PCE), improve the photovoltaic performance of solar cells. [0003] The most studied ...

Claims

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Application Information

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IPC IPC(8): C09K11/62H01G9/20B82Y30/00B82Y20/00
CPCC09K11/623H01G9/20B82Y20/00B82Y30/00
Inventor 戴武斌樊烨明陈洋李孝斌吴锐敏刘凯徐慢
Owner WUHAN INSTITUTE OF TECHNOLOGY
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