eGaN HEMT hybrid driving circuit and control method

A driving circuit and hybrid technology, applied in electrical components, high-efficiency power electronic conversion, output power conversion devices, etc., can solve problems such as inability to drive current control, inability to realize high-speed switching of eGaN HEMT, etc., to alleviate EMI problems and reduce driving. The effect of loss

Inactive Publication Date: 2019-09-10
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the drive circuits of eGaN HEMTs in the prior art often have technical problems such as serious EMI problems, inability to control the drive current, and inability to realize high-speed switching of eGaN HEMTs.

Method used

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  • eGaN HEMT hybrid driving circuit and control method
  • eGaN HEMT hybrid driving circuit and control method

Examples

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Embodiment Construction

[0016] This specific embodiment discloses an eGaN HEMT hybrid drive circuit, such as figure 1 shown, including the driving voltage source U dri , turn-on drive circuit and turn-off drive circuit; turn-on drive circuit includes turn-on drive PMOS tube Q dri_on , turn on the drive PMOS transistor Q dri_on The source is connected to the driving voltage source U dri The positive pole of the drive PMOS transistor Q is turned on dri_on The drain connection of the turn-on drive diode D on The anode of the drive diode D is turned on on The cathode of the turn-on inductance saturation control circuit is connected to the input end of the inductance saturation control circuit, and the output end of the turn-on inductance saturation control circuit is connected to the gate of the eGaN HEMT; dri_off , turn off the driving NMOS transistor Q dri_off The source is connected to the driving voltage source U dri The negative pole of the drive NMOS tube Q is turned off dri_off The drain i...

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Abstract

The invention discloses an eGaN HEMT hybrid driving circuit, which comprises a driving voltage source Udri, a turn-on driving circuit and a turn-off driving circuit. In addition, the invention discloses a method for controlling the eGaN HEMT hybrid driving circuit. The oscillation and peak of the driving current during Miller platform can be suppressed, and the EMI problem can be alleviated. High-speed turn-on / off of an eGaN HEMT can be realized. The driving loss can be reduced.

Description

technical field [0001] The present invention relates to a drive circuit suitable for eGaN HEMT, in particular to an eGaN HEMT hybrid drive circuit and a control method. Background technique [0002] In recent years, due to its superior electrical performance, eGaN HEMT has received more and more attention, and its application in power conversion systems is expected to significantly improve system efficiency and reduce volume and weight. Compared with traditional Si devices, eGaNHEMT has lower on-resistance, faster switching speed and higher switching frequency, so it has very broad application prospects. [0003] The drive circuit is the bridge connecting the power device and the specific functional circuit. In order to give full play to the performance of the power device, an excellent and reliable drive circuit is essential. However, the driving circuit of the eGaN HEMT in the prior art often has technical problems such as serious EMI problems, inability to control the dr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M1/44
CPCH02M1/08H02M1/44Y02B70/10
Inventor 彭子和秦海鸿
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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