Electrolytic polishing method and device for semi-conductor materials

Abstract

The invention discloses an electrolytic polishing device for semi-conductor materials. The electrolytic polishing device comprises a bottom plate. A device base is fixedly connected to the side wall of the upper end of the bottom plate. An electrolytic pool is arranged at the upper end of the device base. The invention further provides an electrolytic polishing method for the semi-conductor materials. The method comprises the following steps that 1, anodes of the multiple semi-conductor materials to be polished are prepared before electrolytic polishing, the surfaces of the anodes are subjected to primary manual polishing treatment, impurities remaining on the surfaces of the anodes are removed, and clear water is used for washing the surfaces of the anodes. The electrolytic polishing device is reasonable in structure and convenient to use; a heating device and a lifting stirring mechanism are arranged, by means of the heating device, the temperature of an electrolytic solution is increased, the speed of electrolytic polishing is increased beneficially, by means of the lifting stirring mechanism, flowing of the electrolytic solution can be prompted, ion diffusion of a polishing area and supplementing of a new electrolytic solution can be ensured, therefore electrolytic polishing of the anodes is prompted, and the efficiency of electrolytic polishing is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material processing, in particular to an electrolytic polishing method and device for semiconductor materials. Background technique [0002] Materials in nature can be divided into three categories: conductors, semiconductors, and insulators according to their electrical conductivity. Among them, semiconductor materials are a class with semiconductor properties, that is, the electrical conductivity is between conductors and insulators, and the resistivity is about 1mΩ·cm~1GΩ· cm range, and can be used to make electronic materials for semiconductor devices and integrated circuits. [0003] Abrasive treatment such as grinding and grinding is a necessary way to produce semiconductor wafers. Polishing and planarization are very important for the production of microelectronic components. The most common traditional polishing method is mechanical polishing. However, mechanical polishing is not onl...

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Problems solved by technology

[0003] Abrasive treatment such as grinding and lapping is a necessary way to produce semiconductor wafers. Polishing and planarization are very important for the production of microelectronic components. The traditional and most common polishing method is mechanical polishing. However, mechanical polishing is time-consuming and labor-intensive. It is easy to cause The error of thickness and parallelism will lead to the deterioration of the surface integrity of the semiconductor material, and it is easy to be broken and damaged. Therefore, electrolytic polishing can be used instead of mechanical polishing. Carry out special anodic treatment to obtain a smooth and bright surface finishing process to improve the processing accuracy of semiconductor materials. In the process of electrolytic polishing, generally the higher the temperature, the faster the polishing and leveling speed, and electrolytic polishing Stirring the electrolyte during polishing can promote the flow of the electrolyte and ensure the most suitable polishing conditions

[0004] Existing electropolishing devices for semiconductor materials have a simple structure. Generally, the anode is set as the workpiece to be polished, the anode and the cathode are connected through the electrolyte, and a direct current is used for electropolishing, but the temperature of the electrolyte cannot be increased, and It lacks the function of stirring the electrolyte, and the temperature and stirring have a certain influence on the speed of electropolishing, which makes the speed of electropolishing slow and the efficiency low. Therefore, we propose a method and device for electropolishing of semiconductor materials, which are used to solve the above problems

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