Test structure for monitoring backside-illumination electronegativity intensity and process integration method

A test structure, back-illuminated technology, used in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc., can solve the problems of prolonged development cycle, lag, waste of silicon wafers, etc., and achieve low process cost and low test cost. , Test the effect of convenience
CN110299372AActive Publication Date: 2019-10-01SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Publication Date
2019-10-01

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Abstract

The invention discloses a test structure for monitoring backside-illumination electronegativity intensity. The structure comprises a first electrode region with the same process condition as a photosensitive doped region of a pixel region, a first passivation layer including an electronegativity material layer is formed at the back side of the first electrode region, a back side metal layer is formed on the back side of the first passivation layer, the first electrode region, and the first passivation layer and the back side metal layer on the back side are stacked to form a monitoring capacitor. The first electrode region is connected to a first front liner which is connected to a first back liner, a second back liner is formed on the back side of the back side metal layer on the back side of the first electrode region, and lead-out structures of two pole plates of the monitoring capacitor are formed by the first and second back liners. The invention also discloses a process integration method of the test structure for monitoring the backside-illumination electronegativity intensity. The online continuous monitoring of the electronegativity intensity of a backside-illumination image sensor can be achieved, the test period and the feedback period can be effectively shortened, the consumption of a silicon wafer is reduced, and the research and development progress is accelerated.
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Description

technical field

[0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a test structure for monitoring the electronegativity intensity of the back-illuminated type; the invention also relates to a process integration method for the test structure for monitoring the electronegativity intensity of the back-illuminated type. Background technique

[0002] A conventional CMOS image sensor (CMOS Image Sensor, CIS) is composed of a pixel (Pixel) unit circuit and a CMOS circuit. The pixel unit circuit is formed in a pixel area, and the CMOS circuit is formed in a peripheral area. Compared with CCD image sensors, CMOS image sensors have better integration because they adopt CMOS standard manufacturing process, and can be integrated with other digital-analog operations and control circuits on the same chip, which is more adaptable to future development.

[0003] The pixel unit circuit in the pixel area includes a photodiode (PD). ...

Claims

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