High-gain high-power voltage transformation and combination power amplifier

A power amplifier, high-power technology, applied in power amplifiers, amplifiers, DC-coupled DC amplifiers, etc., can solve the difficulty of high-power, high-efficiency output, the difficulty of low-power consumption, and the ability to limit high-power and high-efficiency and other problems, to achieve the effect of improving the impedance matching characteristics between stages, expanding the bandwidth, increasing the gain and power capacity
CN110299894APending Publication Date: 2019-10-01QINGHAI UNIV FOR NATITIES +1
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
QINGHAI UNIV FOR NATITIES
Publication Date
2019-10-01

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Abstract

The invention discloses a high-gain high-power voltage transformation and combination power amplifier. The transformation and combination power amplifier comprises an input power distribution matchingnetwork, a first two-stage feedback amplification network, a second two-stage feedback amplification network, a third two-stage feedback amplification network, a fourth two-stage feedback amplification network and an output four-way power synthesis matching network. According to the core architecture, the first two-stage feedback amplification network, the second two-stage feedback amplificationnetwork, the third two-stage feedback amplification network and the fourth two-stage feedback amplification network are adopted; the good parasitic parameter inhibition property of the differential amplifier in the microwave frequency band is utilized, and meanwhile, the high-power and high-gain characteristics of the two-stage feedback amplifier in the microwave band are utilized to be combined with the good power synthesis characteristic of the distributed transformer network, so that the whole power amplifier obtains good high gain, high efficiency and high power output capacity.
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Description

technical field

[0001] The invention relates to the fields of field effect transistor radio frequency power amplifiers and integrated circuits, in particular to a high-gain, high-power variable-voltage synthesis power amplifier applied to a transmitting module at the end of a radio-frequency microwave transceiver. Background technique

[0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have high output power, high gain, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand.

[0003] However, when using integrated circuit technology to design and implement RF and microwave power amplifier chip circuits, its perf...

Claims

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