GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as reducing the luminous efficiency of LEDs, and achieve the effects of improving luminous efficiency and increasing the number of holes

Active Publication Date: 2019-10-08
HC SEMITEK ZHEJIANG CO LTD
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  • Claims
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Problems solved by technology

However, AlN also has a blocking effect on holes, which affects the injection of holes in the P-type layer into the multi-quantum well layer, or reduces the number of holes injected into the multi-quantum well layer, and ultimately reduces the luminous efficiency of the LED.

Method used

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  • GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof
  • GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof
  • GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0031] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer. figure 1A schematic structural diagram of a GaN-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the GaN-based light-emitting diode epitaxial wafer includes a substrate 10 , a buffer layer 20 , an N-type layer 30 , a multi-quantum well layer 40 , an electron blocking layer 50 and a P-type layer 60 stacked in sequence.

[0032] figure 2 Schematic diagram of the structure of the electron blocking layer provided by the embodiment of the present invention. see figure 2 , the electron blocking layer 50 is composed of a plurality of first composite structures 500 stacked i...

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Abstract

The invention discloses a GaN-based light-emitting diode epitaxial wafer and a manufacturing method thereof, which belong to the technical field of semiconductors. The GaN-based light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an N-type layer, a multi-quantum well layer, an electron blocking layer, and a P-type layer which are sequentially stacked, wherein the electron blocking layer is composed of a plurality of first composite structures stacked sequentially; each first composite structure is composed of a first sub-layer, a second sub-layer, a third sub-layer, a fourth sub-layer and a fifth sub-layer which are sequentially stacked; both the first sub-layer and the fifth sub-layer are undoped AlGaN layers; the content of the Al component in the first sub-layer is smaller than the content of the Al component in the fifth sub-layer; the second sub-layer is an undoped InGaN layer; the third sub-layer is an undoped MgN layer; the fourth sub-layer is an undoped GaN layer; and Mg in the third sub-layer is diffused to the fourth sub-layer. The light-emitting efficiency of the LED can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a GaN-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly, and green new solid-state lighting source, LEDs are being rapidly and widely used in fields such as traffic lights, automotive interior and exterior lights, urban landscape lighting, and mobile phone backlights. [0003] Epitaxial wafers are the main components of LEDs. The existing GaN-based LED epitaxial wafer includes a substrate and a GaN-based epitaxial layer disposed on the substrate. The GaN-based epitaxial layer includes a buffer layer, an N-type layer, a multi-quantum well layer and a P-type layer stacked on the substrate in sequence. . The buffer layer is used to provide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/20H01L33/32
CPCH01L33/145H01L33/20H01L33/32H01L33/325
Inventor 刘浪陆香花周飚胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD
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