GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a GaN-based light-emitting diode epitaxial wafer and a manufacturing method thereof, which belong to the technical field of semiconductors. The GaN-based light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an N-type layer, a multi-quantum well layer, an electron blocking layer, and a P-type layer which are sequentially stacked, wherein the electron blocking layer is composed of a plurality of first composite structures stacked sequentially; each first composite structure is composed of a first sub-layer, a second sub-layer, a third sub-layer, a fourth sub-layer and a fifth sub-layer which are sequentially stacked; both the first sub-layer and the fifth sub-layer are undoped AlGaN layers; the content of the Al component in the first sub-layer is smaller than the content of the Al component in the fifth sub-layer; the second sub-layer is an undoped InGaN layer; the third sub-layer is an undoped MgN layer; the fourth sub-layer is an undoped GaN layer; and Mg in the third sub-layer is diffused to the fourth sub-layer. The light-emitting efficiency of the LED can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a GaN-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly, and green new solid-state lighting source, LEDs are being rapidly and widely used in fields such as traffic lights, automotive interior and exterior lights, urban landscape lighting, and mobile phone backlights. [0003] Epitaxial wafers are the main components of LEDs. The existing GaN-based LED epitaxial wafer includes a substrate and a GaN-based epitaxial layer disposed on the substrate. The GaN-based epitaxial layer includes a buffer layer, an N-type layer, a multi-quantum well layer and a P-type layer stacked on the substrate in sequence. . The buffer layer is used to provide...

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Problems solved by technology

However, AlN also has a blocking effect on holes, which affects the injection of holes in the P-type layer into the multi-quantum well layer, or reduces the number of holes injected into the multi-quantum well layer, and ultimately reduces the luminous efficiency of the LED.

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