Sample platform capable of simultaneously preparing surface-enhanced Raman substrate on large scale

A surface-enhanced Raman and sample stage technology, applied in ion implantation plating, coating, nanotechnology, etc., can solve problems such as waste, raw material deposition, etc., and achieve the effect of improving production efficiency and good product consistency

Inactive Publication Date: 2019-10-15
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the high price of precious metals, and the method of electron beam evaporation is spherical due to...

Method used

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  • Sample platform capable of simultaneously preparing surface-enhanced Raman substrate on large scale
  • Sample platform capable of simultaneously preparing surface-enhanced Raman substrate on large scale
  • Sample platform capable of simultaneously preparing surface-enhanced Raman substrate on large scale

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) The silicon substrate polished on one side is ultrasonically cleaned one by one with acetone, absolute ethanol and deionized water and dried;

[0028] (2) the pretreated silicon substrate is pasted on the sample stage of the present invention

[0029] (3) Align the center of the outer circle of the sample stage with the crucible

[0030] (4) At room temperature, using metallic silver as the target material, the chamber of the double electron beam evaporation coating machine is evacuated to a vacuum degree of 4*10 -4 Pa.

[0031] (5) Adjust, control the plating rate of silver Co-deposit a silver nanorod thin film with a length of about 600nm on the substrate of the sample stage;

[0032] (6) Preparation 10 -5 mol / L R6G solution;

[0033] (7) Put the surface-enhanced Raman substrate prepared in steps (1) to (5) into the solution prepared in step 6, and soak for 30 minutes;

[0034] (8) put the surface-enhanced Raman substrate that step (7) gained is adsorbed wi...

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PUM

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Abstract

The invention discloses a sample platform capable of simultaneously preparing a surface-enhanced Raman substrate on a large scale, and belongs to the technical field of trace organic matter detection.The sample platform is used for preparing the surface-enhanced Raman substrate on a large scale. The sample platform comprises a supporting part and a boss-shaped circular ring, wherein the diameterof the upper part of the boss-shaped circular ring is larger than the diameter of the bottom part of the boss-shaped circular ring, and the surface of the boss is in an arc shape. The sample platformcan simultaneously deposit silver nanorods on a plurality of substrates using an inclined growth method. An array film formed by the multi-substrate silver nanorods has good product consistency, andthe production efficiency of the traditional preparation method can be improved.

Description

technical field [0001] The invention belongs to the technical field of trace organic matter detection, in particular to a sample stage capable of mass-preparing surface-enhanced Raman substrates. Background technique [0002] As a trace substance detection method, the surface-enhanced Raman effect is widely used in the fields of environmental pollutant detection, food safety detection, biology and medical treatment due to its high sensitivity, rapid detection, low cost, and non-destructive analysis. Usually, noble metal materials such as gold, silver or copper are used to prepare high-sensitivity surface-enhanced Raman substrates, and the surface-enhanced Raman effect of silver nanostructure substrates is the best. Due to the high price of precious metals, and the method of electron beam evaporation is spherical due to space diffusion, a large amount of raw materials are deposited on the cavity wall, resulting in a lot of waste. [0003] In order to improve its deficiencies...

Claims

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Application Information

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IPC IPC(8): C23C14/50C23C14/30C23C14/16B82Y40/00
CPCB82Y40/00C23C14/16C23C14/225C23C14/30C23C14/50
Inventor 张政军樊易航
Owner TSINGHUA UNIV
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