A method for cleaning silicon wafers

Abstract

The invention provides a silicon wafer cleaning method, comprising five main steps of SC-1 cleaning, ozone water cleaning, DIW cleaning, HF treatment and pulling drying, and overflowing the pure water after SC-1 cleaning in the prior art The cleaning step is replaced by ozone water cleaning. After the silicon wafer is cleaned by SC‑1, put it into the ozone water cleaning tank in a vertical state and soak for 5-7 minutes. The liquid opens two nozzles at the same time, and the nozzles on the nozzles spray both sides of the silicon wafer uniformly at the same time. The spray pressure of each nozzle is 0.2-0.3MPa, and the flow rate is 2-3l / min. The interval is 10-15cm. The metal hydroxide compound ions on the silicon wafer are quickly oxidized into hydroxides in a short period of time by spraying, and the hydroxides flow to the bottom of the ozone water cleaning tank under the action of the spraying liquid flow, and are quickly drained The valve is quickly expelled so that it has neither residence time nor chance of reattachment, thereby achieving the removal of metal hydroxide complex ions.

Description

technical field [0001] The invention relates to the technical field of silicon wafer cleaning, in particular to a silicon wafer cleaning method. Background technique [0002] Semiconductor silicon wafers are essential semiconductor materials in the fields of automobiles, mobile phones, and PCs. With the development of portability and concentration of semiconductor devices, there are higher requirements for silicon wafers as the basic material, especially in terms of cleanliness, which require higher standard levels. Therefore, it is imperative to improve the cleaning engineering capability in silicon wafer manufacturing engineering. [0003] During the manufacturing process of silicon wafers, it needs to be processed by grinding, grinding and other processes. During the processing, the abrasive liquid containing aluminum and silicon shavings will be used, resulting in fine metal ions containing metal grinding shavings and abrasive particles remaining on the silicon wafers. ...

AI Technical Summary

Problems solved by technology

Although metal ions and metal oxides can be removed from silicon wafers, the effect on metal hydroxide [M(OH)x]-complex ions is not obvious, and they cannot be completely removed, and they still remain on the surface of product silicon wafers

[0005] Aiming at the problem of ion residues, the currently available countermeasure is to install a metal ion filter on the liquid medicine tank, but it cannot effectively remove metal hydroxide compound ions (especially aluminum and iron ions that are easy to form metal hydroxides). There is no effective way to remove