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Temperature compensation method and temperature calibration method in constant temperature

A technology of temperature compensation and calibration method, which is applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of long pull temperature calibration time, high cost, and process results that do not meet the requirements, and achieve simple implementation , repeatability, and the effect of saving the cost of temperature calibration

Pending Publication Date: 2019-10-22
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after the pull temperature calibration is performed, the process device will continue to deposit films on the quartz parts in the process chamber. As the thickness of the deposited film continues to increase, the hardware changes subtly, and these hardware changes will affect the The heat radiation and heat conduction of the heating element, as well as the temperature measurement sensitivity and accuracy of the thermocouple, therefore, directly lead to inaccurate LPCVD process temperature, which ultimately affects the process level and effect
[0005] At present, after several processes of LPCVD equipment, if it is found that the process results do not meet the requirements due to inaccurate temperature, it is usually necessary to calibrate the constant temperature zone again or replace the hardware before performing the constant temperature zone calibration; Calibration, the pull temperature calibration of two temperature points takes a long time, and follow-up tests need to be arranged at the same time
Frequent hardware replacement will not only increase the cost, but also affect the online time of the machine

Method used

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  • Temperature compensation method and temperature calibration method in constant temperature
  • Temperature compensation method and temperature calibration method in constant temperature
  • Temperature compensation method and temperature calibration method in constant temperature

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Embodiment 1

[0038] The invention provides a temperature compensation method, which can be used for temperature compensation of each constant temperature zone of the ion implantation equipment. Such as figure 1 As shown, it is a flow chart of the temperature compensation method provided by Embodiment 1 of the present invention. In Embodiment 1 of the present invention, the temperature compensation method includes:

[0039] Step 101: Obtain the film resistivity on the wafers that have been processed in each constant temperature zone.

[0040] Specifically, the process in this embodiment includes: forming a film, doping with an ion implantation device, and annealing with an annealing device; and the film may be a polysilicon film.

[0041] For different films, the process environment required for film formation is different. For example, the process environment is: the wafer is subjected to a normal deposition process in LPCVD equipment, the deposition temperature is set at 500-600°C, and t...

Embodiment 2

[0061] Such as Figure 4 As shown, it is a flow chart of the temperature calibration method in the constant temperature zone provided by the second embodiment of the present invention. In the second embodiment, the temperature calibration method in the constant temperature zone includes:

[0062] Step 201: Calibrate the film forming temperature in each constant temperature zone to obtain a temperature compensation table.

[0063] Specifically, step 201 includes: calculating the difference between the internal temperature value of each constant temperature zone and a reference value, and entering it into the temperature compensation table, wherein the reference temperature value is a temperature detection value near the edge of the wafer. It should be noted that the reference temperature value can be measured by a thermocouple that runs through multiple temperature zones and is vertically inserted from the bottom of the reaction chamber, and the internal temperature of the cham...

Embodiment 3

[0086] For the above temperature compensation method, the present invention also provides a temperature compensation device, which includes: a resistivity collector and a temperature control mechanism.

[0087] The resistivity collector is used to collect the resistivity of the film on the wafer that has completed the process in each constant temperature zone.

[0088] The temperature control mechanism is used to obtain the resistivity of the film; according to the corresponding relationship between the resistivity of the film and the film forming temperature, the temperature deviation value of each constant temperature zone is calculated; the film forming temperature of each constant temperature zone is compensated according to the temperature deviation value of each constant temperature zone .

[0089] In the temperature compensation device provided by the embodiment of the present invention, after the temperature control mechanism obtains the film resistivity on the wafer t...

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Abstract

The invention provides a temperature compensation method which comprises the following steps: acquiring film resistivity of wafers of a process in constant temperature areas; calculating temperature deviation values in the constant temperature areas according to a corresponding relationship between the film resistivity and the film forming temperatures; and compensating the film forming temperatures in the constant temperature areas according to the temperature deviation values in the constant temperature areas. According to the temperature compensation method, the temperature calibration costis saved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a temperature compensation method and a temperature calibration method in a constant temperature zone. Background technique [0002] At present, substrate processing technology has been widely used in the manufacturing process of high-tech products such as solar cells, TFT panels and large-scale integrated circuits. For example, the plasma-enhanced chemical vapor deposition (Low Pressure Chemical Vapor Deposition, hereinafter referred to as LPCVD) technology, which is an important substrate processing technology, is often applied in the above-mentioned fields and processes. In the LPCVD control system, temperature control runs through the entire process, and the excellent control accuracy directly determines the excellent rate of process products. [0003] LPCVD equipment includes a furnace body, a reaction chamber and a motion mechanism. When the process needs to be ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C16/50C23C16/24C23C16/56H01L21/67
CPCC23C16/52C23C16/50C23C16/24C23C16/56H01L21/67248
Inventor 王玉霞孙妍吴艳华周文飞
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD