Silicon carbide single crystal continuous growth device and growth method thereof

Abstract

The invention discloses a silicon carbide single crystal continuous growth device, the silicon carbide single crystal continuous growth device comprises a raw material bin, a growth bin and a recoverybin which are communicated in sequence, and a feeding mechanism for feeding silicon carbide polycrystalline raw materials in the raw material bin into the growth bin, the feeding mechanism is also used for feeding residues in the growth bin into the recovery bin, and the feeding mechanism sequentially passes through the raw material bin, the growth bin and the recovery bin along the feeding direction; the growth bin comprises a crucible body, a liftable crucible cover which sleeves or penetrates the upper part of the crucible body and is used for installing seed crystals on the lower surfaceof the crucible body, a driving mechanism for driving the crucible cover to lift, and a heating mechanism for heating the crucible body; and the crucible cover is positioned above the feeding mechanism. According to the silicon carbide single crystal continuous growth device, the polycrystalline silicon carbide raw materials in the crucible body can be continuously supplemented to ensure continuous growth of silicon carbide single crystals so as to obtain large-size silicon carbide single crystals; meanwhile, the transportation of the silicon carbide polycrystalline raw materials and the growth conditions of the silicon carbide single crystals are not affected.

Description

technical field [0001] The invention relates to a silicon carbide single crystal continuous growth device and a growth method thereof. Background technique [0002] The physical vapor transport method (PVT method) is the main technical method for the growth of silicon carbide single crystal. This method is to install the silicon carbide polycrystalline raw material at the bottom of the cylindrical graphite crucible body, and cover the graphite crucible body with the graphite crucible cover to form In a closed space, silicon carbide seed crystals are installed on the lower surface of the graphite crucible cover. By heating the system composed of the graphite crucible body and the graphite crucible cover, the silicon carbide polycrystalline raw material in the graphite crucible body is sublimated and the silicon carbide polycrystalline material is maintained. There is a suitable temperature gradient between the raw material and the silicon carbide seed crystal, and the sublima...

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Problems solved by technology

Existing growth equipment will lead to certain restrictions on the acquisition of large-sized silicon carbide single crystals, making it difficult to obtain large-sized silicon carbide single crystals, and the production efficiency is also low

[0004] In view of the above situation, there is also a device that continuously feeds silicon carbide polycrystalline raw materials. Only continuous feeding has the following disadvantages: the generated residue will cause the space in the crucible to become smaller and smaller, making it impossible for the raw material to enter; the generated residue will cause the raw material to pile up The higher the value, the shorter the distance from the seed crystal, which affects the temperature gradient and the high-quality growth of SiC single crystal

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