High-efficiency GaN three-phase inverter module for new energy power generation system

Abstract

The invention relates to a high-efficiency GaN three-phase inverter module for a new energy power generation system. The high-efficiency GaN three-phase inverter module comprises a controller, a firstGaN half-bridge circuit, a second GaN half-bridge circuit, a third GaN half-bridge circuit, a detection circuit and a feedback circuit. The first GaN half-bridge circuit comprises a first gate driving circuit H, a second gate driving circuit L, a GaN power switch MH, a GaN power switch ML and current-limiting resistors RH and RL. The second GaN half-bridge circuit comprises a third gate driving circuit H1, a fourth gate driving circuit L1, a GaN power switch MH1, a GaN power switch ML1 and current-limiting resistors RH1 and RL1. The third GaN half-bridge circuit comprises a fifth gate drivingcircuit H2, a sixth gate driving circuit L2, a GaN power switch MH2, a GaN power switch ML2 and current-limiting resistors RH2 and RL2. The high-efficiency GaN three-phase inverter module realizes high frequency of a full-bridge inverter by adopting an LGA-packaged GaN HEMT device, adopts a multi-tube parallel structure for improving power level, and adopts a double-sided layout structure to realize high-density power integration and high efficiency for improving reliability.

Description

technical field [0001] The invention relates to a high-efficiency GaN three-phase inverter module used in a new energy power generation system, belonging to the field of power electronics. Background technique [0002] In the 21st century, driven by emerging industries such as smart grids, mobile communications, and new energy vehicles, power electronics application systems require further improvement of system efficiency, miniaturization, and increased functionality, especially requiring circuit applications in terms of size, quality, power, and efficiency. trade-offs, such as server power management, battery chargers, and microinverters for solar farms. The above applications require the power electronic system to have high power density (>500W / in 3 , namely 30.5W / cm 3 ), high specific power (10kW / lb, 22kW / kg) and high total load point (>1000W). With the emergence and popularization of super-junction MOSFETs and insulated gate bipolar transistors (IGBTs), device p...

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Problems solved by technology

[0007] However, to increase the power density by increasing the switching frequency, we need to face two bottlenecks: one is that the current of the switching branch changes very rapidly and the di / dt is very high during the switching process of the GaN device. Parasitic inductance, when the current changes rapidly, can generate high spike overvoltage across the switching device

If the wiring is not optimized enough and the parasitic inductance is large, it will directly affect the normal operation of the circuit

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