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High-sensitivity temperature measurement method and application based on bismuth-manganese co-doped dual luminescence properties

A technology with high sensitivity and luminescence characteristics, applied in the field of temperature sensing, which can solve problems such as energy level difference

Active Publication Date: 2021-03-23
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the relative thermometry sensitivity is proportional to the energy level difference of the thermally coupled energy levels
Therefore, the thermal coupling conditions limit the further improvement of the detection sensitivity and signal detection discrimination of the single rare earth luminescent ion thermal coupling energy level fluorescence intensity ratio temperature measurement scheme

Method used

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  • High-sensitivity temperature measurement method and application based on bismuth-manganese co-doped dual luminescence properties
  • High-sensitivity temperature measurement method and application based on bismuth-manganese co-doped dual luminescence properties
  • High-sensitivity temperature measurement method and application based on bismuth-manganese co-doped dual luminescence properties

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Experimental program
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Effect test

Embodiment 1

[0047] 1. Co-doping bismuth and manganese into inorganic oxides at a reasonable concentration to prepare a fluorescent temperature sensing material that emits light together with trivalent bismuth and tetravalent manganese;

[0048] 2. Test the emission spectrum of the fluorescent temperature sensing material at different temperatures, and establish a standard working curve for the characteristic emission peak intensity ratio of trivalent bismuth and tetravalent manganese as the ambient temperature changes;

[0049] 3. Place the fluorescent temperature sensing material in the environment of the temperature to be measured, measure the emission spectrum of the fluorescent temperature sensing material, and then obtain the emission peak intensity ratio of trivalent bismuth and tetravalent manganese;

[0050] 4. Substituting the ratio into the standard working curve in step 2 to obtain the temperature measurement value of the environment to be measured, and complete the high-sensiti...

Embodiment 2

[0062] The difference between this embodiment and the previous embodiment is that the fluorescent temperature sensing material prepared in step 1 has a specific atomic ratio composition: (Ca 1.995 Sr)(Al 2.99 Ga)ZnO 10 : Bi 0.005 3+ ,Mn 0.01 4+ . Other steps and parameters are the same as those in the previous embodiment.

Embodiment 3

[0064] The difference between this embodiment and the previous embodiment is that the preparation method of the fluorescent temperature sensing material in step 1 is to dissolve the corresponding nitrates of Ca, Sr, Al, Ga, Zn, Bi, Mn according to the atomic ratio under the condition of stirring. A mixed solution was obtained in deionized water, and then citric acid was added to the mixed solution, and then dried at 90°C to form a gel, and then sintered step by step at 500°C and 1200°C for 4 hours each to obtain a sample. Other steps and parameters are the same as those in the previous embodiment.

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Abstract

The invention belongs to the technical field of temperature sensing. A fluorescent temperature sensing material comprises the constituent with an atomic ratio shown in a general formula (I): (Ca<3-m-x>Sr<m>)(Al<4-n-y>Ga<n>)ZnO<10>:Bi<x><3+>, Mn<y><4+> (I), wherein m is more than or equal to 0 but less than or equal to 1, n is more than or equal to 0 but less than or equal to 1, a is more than or equal to 0.001 but less than or equal to 0.02, and y is more than or equal to 0.001 but less than or equal to 0.02. The trivalent bismuth and quadrivalence manganese co-doped dual-light emitting characteristic-based high-sensitivity temperature measurement method is performed according to the following steps of 1, jointly doping bismuth and manganese in a matrix according to reasonable concentration to prepare a fluorescent temperature sensing material with trivalent bismuth and quadrivalence manganese which jointly emit light; 2, building a standard working curve of a intensity ratio, betweena trivalent bismuth emission peak and a quadrivalence manganese emission peak, changing with a temperature; 3, placing the fluorescent temperature sensing material in an environment of a to-be-measured temperature, and measuring emission spectrum to obtain the intensity ratio between the trivalent bismuth emission peak and the quadrivalence manganese emission peak; and 4, substituting the intensity ratio into the standard working curve so as to obtain the to-be-measured temperature and complete trivalent bismuth and quadrivalence manganese co-doped dual-light emitting characteristic-based high-sensitivity optical temperature measurement.

Description

technical field [0001] The invention relates to the technical field of temperature sensing, in particular to an optical temperature measurement method based on bismuth and manganese co-doped double emission characteristics, a high-sensitivity fluorescent temperature sensing material, a preparation method and an application thereof. Background technique [0002] Temperature is a very important physical quantity, and its accurate measurement is of great significance. With the rapid development of Internet of Things technology, the demand for the characteristics of temperature sensors is increasing, such as temperature monitoring in special environments such as strong electromagnetic, flammable and explosive. Traditional sensing components that use electrical signals to monitor temperature such as thermocouples have been unable to meet the long-term stable measurement of temperature. At this time, the research and development of optical temperature sensing technology becomes m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K11/20C09K11/64
CPCC09K11/7421G01K11/20
Inventor 郭宁王瑶朱淼淼张玉慧欧阳瑞镯缪煜清
Owner UNIV OF SHANGHAI FOR SCI & TECH
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