Copper column cushion block with stress buffering performance and anisotropic conductivity and manufacturing method thereof

Abstract

The invention relates to the technical field of power electronic device packaging, and provides a technical scheme of a novel copper column cushion block capable of being used for packaging a double-sided heat dissipation / planar electronic device and a module, thereby realizing stress buffering and anisotropic conductivity. The invention discloses a manufacturing method of a copper column cushionblock with stress buffering performance and anisotropic conductivity. A plurality of insulated copper wires with the diameter of 0.3-0.5 mm are placed into a circular or square half-open mold, and when the insulated copper wires are put into the mold, the insulated copper wires are enabled to exceed the front end surface and the rear end surface of the mold for a certain length, wherein the lengthexceeding the front end surface of the mold is greater than or equal to the length of the mold. When the mold is filled with the placed insulating copper wires, the half-open mold is closed, and theinsulated copper wires exceeding the front end surface of the mold are placed in the polymer adhesive, so that the adhesive is attached to the surfaces of the insulated copper wires and the interval between every two insulated copper wires. The copper column cushion block and the method are mainly applied to power electronic device packaging occasions.

Description

technical field [0001] The invention relates to the technical field of packaging of power electronic devices, in particular to a copper pillar spacer with stress buffering and anisotropic conduction and a preparation method thereof. Background technique [0002] With the development of power electronics technology, electronic devices are developing in the direction of high frequency, high density, high power and high temperature applications. The heat dissipation efficiency of the single-sided packaging structure used in traditional semiconductor power devices is not high, and the heat generated inside can only be discharged from the lower surface of the semiconductor power chip. In recent years, the double-sided packaging structure has received more and more attention because it can greatly improve the heat dissipation efficiency of semiconductor power devices. The encapsulation structure can discharge the heat generated inside the semiconductor power device from two direc...

AI Technical Summary

Problems solved by technology

When the gate of the chip is not located at the corner of the chip, in order to increase the allowable current value as much as possible, it is necessary to design and process metal pillars with complex shapes and structures. On the one hand, it increases the difficulty of operation, and on the other hand, it also increases the cost.

[0004] In a module where multiple chips are connected in parallel and independently controlled between chips, multiple metal pillars need to be used to achieve a double-sided structure. A downward contraction force will be generated when the point is solidified, but each solder joint is not solidified at the same time, which will cause the area where the solder joint solidifies first to be subjected to the contraction force and shift downward, and will be displaced when other solder joints solidify The hindrance of the solidified solder joint reduces the downward offset, which eventually leads to a certain angle of deviation between the upper and lower direct copper clad substrates (DBC)

Images