A kind of manufacturing method of laminated inductor and the manufactured device

A manufacturing method and a technology of laminated inductors, which are applied in the field of manufacturing methods and manufactured devices, can solve the problems of poor inductance quality factors and low inductance values, and achieve the effects of increasing process costs, large inductance values, and reducing occupation

Active Publication Date: 2021-03-09
福建省福联集成电路有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] For this reason, it is necessary to provide a method for manufacturing a laminated inductor and the manufactured device, so as to solve the problems of poor quality factor and low inductance value of the inductor manufactured in the prior art

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  • A kind of manufacturing method of laminated inductor and the manufactured device
  • A kind of manufacturing method of laminated inductor and the manufactured device
  • A kind of manufacturing method of laminated inductor and the manufactured device

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Embodiment Construction

[0049] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0050] see Figure 1 to Figure 9 , this embodiment provides a method for manufacturing a stacked inductor. The present invention can simultaneously manufacture a transistor when making an inductor. The transistor can be a PHEMT (pseudo-modulated doped heterojunction field-effect transistor), so that the process of the inductor of the present invention The steps are performed in the same process step as the process steps of the transistor, so the process cost will not be increased. The process steps of the transistor are the process steps of the existing transistor, and the formed structure is also the existing transistor structure. The focus of the present invention is not to form the transistor structure, so the present invention doe...

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Abstract

The invention discloses a method for manufacturing a stacked inductor and a device obtained therefrom, wherein the method comprises the steps of: coating a first photoresist, performing a photolithography process on the bottom of an enhanced gate and the bottom of a first metal layer of the inductor; coating a first photoresist Two photoresist, perform photolithography process on the top of the enhanced gate and the top of the first metal layer of the inductor; deposit metal to form the enhanced gate and the first metal layer of the inductor; passivate the enhanced gate and the first metal layer of the inductor process, forming a first passivation layer; etching the depletion gate and the first passivation layer of nitride connected to the second metal layer of the inductor; coating a third photoresist to perform depletion gate and photolithography process of the second metal layer of the inductor; depositing metal to form the depletion gate and the second metal layer of the inductor. The inductance of the spiral stack shape prepared by this scheme has a better quality factor under high frequency conditions and also has a larger inductance value. And the process is carried out simultaneously with the existing transistor process without increasing the process cost.

Description

technical field [0001] The invention relates to the field of manufacturing integrated inductors, in particular to a method for manufacturing laminated inductors and a manufactured device. Background technique [0002] In the prior art, most integrated inductors with a planar structure are used. Since this integrated inductor is fabricated on a plane parallel to the substrate, under high-frequency conditions, an eddy current (Eddy Current) will be formed in the substrate, and the eddy current The direction is opposite to the direction of the current in the inductor coil, which will lead to a decrease in the magnetic flux of the inductor coil, a large additional energy loss and a decrease in the Q value of the entire inductor. In addition, in the prior art, it is difficult to simultaneously achieve a high inductance value and a high quality factor Q value due to the limitations of the manufacturing process and materials of the integrated circuit for the integrated inductor. T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L21/82H01L27/06
CPCH01L21/82H01L27/0617H01L28/10
Inventor 林豪王潮斌詹智梅肖俊鹏陈东仰郑育新林张鸿林伟铭
Owner 福建省福联集成电路有限公司
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