Constant current device and manufacturing method thereof
A technology of constant current devices and manufacturing methods, applied in semiconductor/solid state device manufacturing, electric solid state devices, semiconductor devices, etc., can solve problems such as low current density, poor high temperature constant current performance, etc., achieve good temperature stability, solve The effect of lower current density and increased operating voltage range
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Embodiment 1
[0046] In this embodiment, the first N-type region and the second N-type region form an N-type diffused well region by diffusion as an example for illustration. Such as figure 2 As shown, the constant current device in this embodiment includes a P-type substrate 1, two independent first N-type regions and second N-type region, the first N-type region in this embodiment is figure 2 The first N-type diffused well region 2 on the left side of the middle, and the second N-type region is figure 2 The second N-type diffused well region 2 on the right side. A first P-type heavily doped region 3 and two first N-type heavily doped regions respectively located on both sides of the first P-type heavily doped region 3 are arranged in the left first N-type diffused well region 2 4. Both the first P-type heavily doped region 3 and the two first N-type heavily doped regions 4 are located on top of the first N-type diffused well region 2 . In the second N-type diffused well region 2 on...
Embodiment 2
[0050] Such as image 3 As shown, it is a schematic cross-sectional structure diagram of the constant current device structure of this embodiment. Compared with Embodiment 1, in this embodiment, the second metal electrode 6 is extended to both sides to form a field plate structure, and the third metal electrode 7 is extended to both sides to form a field plate structure. Both sides extend to form a field plate structure, where image 3 It is drawn that the field plate structure extending to the right of the second metal electrode 6 is located above the interface between the first N-type region 2 and the first P-type heavily doped region 3, and is a constant current diode gate field plate structure; the third The field plate structure of the metal electrode 7 extending to the left is located above the interface between the first N-type region 2 and the first N-type heavily doped region 4, and is a constant current diode drain field plate structure. The gate and drain of the co...
Embodiment 3
[0053] Such as Figure 4 As shown, it is a schematic cross-sectional structure diagram of the constant current device structure of this embodiment. Compared with Embodiment 1, in this embodiment, the first N-type region and the second N-type region adopt an epitaxial method to form an N-type epitaxial layer instead of the embodiment. One of the N-type diffused well regions, the first N-type region in this embodiment is Figure 4 The first N-type epitaxial layer 10 on the left side of the center, and the second N-type region is Figure 4 The second N-type epitaxial layer 10 on the right side of the center, and a P-type diffused well region 11 is arranged between the first N-type epitaxial layer 10 and the second N-type epitaxial layer 10 to communicate with the P-type substrate, and the P-type diffused well Region 11 serves as a P-type isolation region.
[0054] Since the doping distribution of the N-type diffused well region follows a Gaussian function, there is a relatively...
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