Leakage current test structure of 3D magnetic sensor and its forming method
A magnetic sensor and test structure technology, applied in semiconductor/solid-state device testing/measurement, magnetic field-controlled resistors, circuits, etc., can solve the problems of magnetoresistance performance degradation, magnetoresistance layer and CMOS device leakage, etc.
Active Publication Date: 2021-11-26
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
However, in the prior art, due to the stability and uniformity of the fabrication, the magnetoresistance layer and the CMOS device may generate leakage current, which eventually leads to a decrease in the magnetoresistance performance.
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[0022] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0023] refer to figure 1 , the present invention provides a method for forming a leakage current test structure of a 3D magnetic sensor, comprising:
[0024] S11: providing a CMOS device, the CMOS device comprising a first metal layer, a second metal layer located on the first metal layer and connected to the first metal layer through a first through hole;
[0025] S12: Depositing a silicon dioxide layer to cover the first metal layer and the second metal layer, etching part of the silicon dioxide layer to expo...
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The present invention provides a leakage current testing structure of a 3D magnetic sensor and a forming method thereof, comprising: a first metal layer, a second metal layer communicating with the first metal layer through a first through hole, located at the first The silicon dioxide layer on the metal layer and the second metal layer, grooves are formed in the silicon dioxide layer, titanium nitride located on the surface of the silicon dioxide layer and connected to the second metal layer through the second through hole layer, a first test bond on the titanium nitride layer connected to the titanium nitride layer, a second test bond on the second layer of silicon nitride connected to the magnetoresistive layer, the There is a certain distance between the first test key and the second test key. The leakage current test structure and forming method of the 3D magnetic sensor provided by the present invention can be used to detect an external magnetic field; at the same time, by testing whether the first test key and the second test key are connected, the first metal layer and the magnetoresistive layer can be detected Is there a short circuit.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a leakage current testing structure of a 3D magnetic sensor and a forming method thereof. Background technique [0002] A magnetic sensor is a device that can convert various magnetic fields and their changes into electrical signal output. Magnetic sensors include giant magnetoresistive sensors (Giant Magneto Resistive Sensor, GMR), anisotropic magnetoresistive sensors (Anisotropic Magneto Resistive Sensor , AMR) and so on. Taking the anisotropic magnetoresistive sensor as an example, the nickel-iron alloy layer is used as the magnetoresistive layer. When an external magnetic field is applied to the magnetoresistive layer, the magnetic domains of the magnetoresistive layer rotate, causing the resistance of the magnetoresistive layer to change, and the change in the resistance of the magnetoresistive layer is reflected in the change of the output voltage to achieve the pur...
Claims
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IPC IPC(8): H01L21/66H01L43/08H10N50/10
CPCH01L22/30H01L22/32H10N50/10
Inventor 时廷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP