Semiconductor power device and fabrication method thereof

Abstract

The invention relates to the technical field of semiconductor devices, in particular to a semiconductor power device. The semiconductor power device comprises a substrate and power chips and further comprises a covering layer, wherein the substrate is provided with graphical units; the thickness of the substrate is matched with the power chips; the heights of the power chips are less than the thickness of the substrate; the power chips are mounted corresponding to the graphical units; the covering layer is arranged on one side of the substrate provided with the graphical units in a covering manner; and the power chips are mounted on the substrate in a covering manner through the covering layer. The semiconductor power device is simple in structure and reasonable in design; the heights of the graphical units are matched with the thicknesses of the power chips; after the power chips are mounted, the heights of the power chips are less than the thickness of the substrate, so that the arrangement of the covering layer and heat dissipation are facilitated; the semiconductor power device has a good use effect; a fabrication method of the semiconductor power device is simple in technology, and facilitates industrial production and manufacture; and the fabricated semiconductor power device has a good heat dissipation effect.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a semiconductor power device and a preparation method thereof. Background technique [0002] With the advancement of social science and technology, the density of the new generation of semiconductor power devices continues to increase, and their performance is even better. The third generation of semiconductor power devices represented by gallium nitride has shown its excellent high power, high voltage and high density. application characteristics. [0003] The research results show that the performance of semiconductor power devices far exceeds the physical limit performance of traditional devices, but the device performance in practical applications is far lower than its theoretical performance. This is mainly because semiconductor power devices produce large currents while outputting A large amount of heat accumulation causes a sharp rise in the temperature of t...

AI Technical Summary

Problems solved by technology

[0003] The research results show that the performance of semiconductor power devices far exceeds the physical limit performance of traditional devices, but the device performance in practical applications is far lower than its theoretical performance. This is mainly because semiconductor power devices produce large currents while outputting A large amount of heat accumulation causes a sharp rise in the temperature of the device. However, the device packaging represented by gallium nitride and silicon carbide is still dominated by traditional packaging technology, plastic packaging and metal heat conduction. Compared with high-power devices, the overall has a lower Thermal conductivity and heat dissipation problems severely limit the performance of gallium nitride and silicon nitride devices, resulting in a serious decline in device performance and reliability, limiting the use of performance

Images