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Steep sloped vertical tunnel field-effect transistor

A field effect transistor and tunneling technology, applied in the field of tunneling field effect transistor devices

Inactive Publication Date: 2019-11-26
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to such limits, faster switching at low operating voltages is difficult to achieve for future nanodevices

Method used

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  • Steep sloped vertical tunnel field-effect transistor
  • Steep sloped vertical tunnel field-effect transistor
  • Steep sloped vertical tunnel field-effect transistor

Examples

Experimental program
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Embodiment approach

[0069] similar to Figure 2M As shown, according to the present disclosure, another exemplary embodiment of the Tunneling Field Effect Transistor device 400 includes: a first GaN layer 220 (GaN substrate) doped as N-type, and a mask layer 240 made of gallium nitride On the substrate 220 and including a hole 242, the second GaN nanowire layer 250 (the first nanowire source / drain region) covers the GaN substrate 220, extends upward through the hole 242 and is doped with the same N as the GaN substrate 220. type, InGaN or one or more layers of InN Intrinsic InN layer 270 (channel region), which covers the first nanowire source / drain region 250, third GaN nanowire layer 280 (second nanowire source / drain region) covers the channel region 270, and is doped to be P-type different from the GaN substrate 220 and the first nanowire source / drain region 250, and the gate structure (high-k dielectric layer 290 and metal The gate layer 300 ) is adjacent to the channel region 270 .

[007...

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Abstract

The invention describes a vertical tunnel FET device including a vertical P-I-N heterojunction structure of a P-doped nanowire gallium nitride source / drain, an intrinsic InN layer, and an N-doped nanowire gallium nitride source / drain. A high-K dielectric layer and a metal gate wrap around the intrinsic InN layer.

Description

technical field [0001] The present disclosure relates generally to the fabrication of semiconductor structures and, in some embodiments, to the formation of vertical tunneling field effect transistors with gallium nitride (GaN). Background technique [0002] Metal-oxide-semiconductor (MOS) field-effect transistors (FETs) have become the dominant technology for integrated circuits. According to the gate voltage V g and source-drain voltage V ds , metal-oxide-semiconductors can function in three regions: linear, saturated, and subcritical. The subcritical region is the gate voltage V g less than the critical voltage V t Area. The subthreshold swing represents the ease with which transistor current can be switched off and is an important factor in determining the speed and power of a metal-oxide-semiconductor device. The subthreshold swing can be expressed as a function of m*kT / q, where m is a parameter related to capacitance. The subthreshold swing of a conventional MOS...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/205H01L21/331B82Y10/00
CPCH01L29/7391H01L29/205H01L29/66356B82Y10/00H01L29/2003H01L29/045H01L29/401H01L29/0676H01L29/0649H01L29/122H01L21/02389H01L29/66666H01L29/7827H01L29/152
Inventor 彼德·瑞姆瓦尔麦特西亚斯·帕斯拉克
Owner TAIWAN SEMICON MFG CO LTD