Ligand, quantum dot and patterning method of quantum dot layer

A technology of quantum dots and ligands, which is applied in the display field, can solve the problems of high resolution and high resolution patterning technology of quantum dot light-emitting diodes, which have not made breakthroughs and are difficult to achieve.

Pending Publication Date: 2019-12-20
BOE TECH GRP CO LTD
View PDF7 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the current quantum dot light-emitting diode display device has not yet reached the mass production level, one of the important reasons is that the high-resolution patterning technology of quantum dot light-emittin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ligand, quantum dot and patterning method of quantum dot layer
  • Ligand, quantum dot and patterning method of quantum dot layer
  • Ligand, quantum dot and patterning method of quantum dot layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0157] The quantum dots are CdSe / ZnS green quantum dots,

[0158] by as the first ligand, For soluble ligands, For cross-linking ligands.

[0159] According to the mixed ligand ratio of 50% of the first ligand, 25% of the soluble ligand and 25% of the cross-linked ligand, the original oleic acid ligand quantum dots are ligand-exchanged, and the quantum dots after the exchange are successfully prepared. use.

[0160] Spin-coat the mixed solution containing the above-mentioned quantum dots on the Merck organic film to form a quantum dot film, which is irradiated with 365nm ultraviolet light. After the irradiation is completed, the quantum dot film is washed with a mixed solution of p-xylene and heptane. Then it was treated at 120°C for 20 minutes. A patterned green quantum dot layer is obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of display, and in particular to a ligand, a quantum dot and a patterning method of a quantum dot layer. The invention provides the ligand, and the ligand comprisesa coordination unit, a cracking unit, and an adhesion force adjustment unit. The surface of the provided quantum dot is connected with the ligand. The provided patterning method is as follows: providing a base layer; coating the base layer with a mixture containing the quantum dot to form a quantum dot film; exposing the quantum dot film in a preset area by using ultraviolet light, wherein a photolysis reaction of the cracking unit in the ligand is carried out, and molecular segments containing the adhesion force adjustment unit fall off from the surface of the quantum dot after decomposing; and washing and removing the quantum dot film without exposure treatment by using an organic solvent, and performing drying to form a patterned quantum dot layer. The formed quantum dot layer has relatively high resolution.

Description

technical field [0001] The invention relates to the display field, in particular to a ligand, a quantum dot and a patterning method for a quantum dot layer. Background technique [0002] With the in-depth development of quantum dot preparation technology, the stability and luminous efficiency of quantum dots continue to improve, and the research on quantum dot light-emitting diodes continues to deepen. The application of quantum dot light-emitting diodes (Quantum Dot Light Emitting Diodes, QLED for short) display devices The outlook is brightening day by day. Theoretically speaking, compared with conventional organic light-emitting diode display devices, quantum dot light-emitting diode display devices have the advantages of better light source stability, longer life, wider color gamut, and lower cost. [0003] However, at present, quantum dot light-emitting diode display devices have not yet reached the mass production level. One of the important reasons is that the high-r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C07C59/90C09K11/02C09K11/88H01L51/50H01L51/54
CPCC07C59/90C09K11/025C09K11/883H10K85/60H10K85/381H10K50/115C09D11/50C09D11/037C07C53/128C07C57/42B82Y20/00B82Y40/00H10K71/13H10K71/211
Inventor 梅文海张振琦张爱迪张晓远王好伟
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products