Memory programming method and device, electronic device and readable storage medium

A programming method and memory technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as too wide range of threshold voltage range, and achieve the effect of ensuring reliability and reducing the range of the range

Inactive Publication Date: 2019-12-27
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a memory programming method, device, electronic equipment

Method used

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  • Memory programming method and device, electronic device and readable storage medium
  • Memory programming method and device, electronic device and readable storage medium
  • Memory programming method and device, electronic device and readable storage medium

Examples

Experimental program
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Effect test

Embodiment 1

[0068] see Figure 1 to Figure 7 , the present embodiment provides a memory programming method, comprising the following steps:

[0069] 1) programming the memory cells to be programmed in the memory by using an initial programming voltage;

[0070] 2) verifying whether the programming of the memory cells has been completed, and classifying the memory cells that have not passed the verification according to the speed of programming;

[0071] 3) Using different programming voltages to reprogram the failed memory cells with different programming speeds.

[0072] In step 1), if figure 1 S1 and figure 2 As shown, the memory cells to be programmed in the memory are programmed using an initial programming voltage. exist figure 2 In the flow chart shown, the programming process is started in step 101, the initial setting is performed in step 102, the data to be programmed is loaded, and the position to be programmed is confirmed (that is, the programming address is set), accor...

Embodiment 2

[0090] see Figure 8 to Figure 9 , this embodiment provides a memory programming method. Compared with the method in the first embodiment, the difference of this embodiment is that: in this embodiment, the different programming voltages include the programming voltages with different voltage values ​​and durations.

[0091] As an example, the different programming voltages include a third programming voltage and a fourth programming voltage, the duration of the third programming voltage is shorter than the fourth programming voltage, and the voltage value of the third programming voltage is smaller than the The voltage value of the fourth programming voltage; the third programming voltage is used to reprogram the fast cells, and the fourth programming voltage is used to reprogram the slow cells. In this embodiment, the voltage value of the third programming voltage is smaller than the voltage value of the fourth programming voltage by introducing a word line voltage that vari...

Embodiment 3

[0096] see Figure 10 to Figure 11 , this embodiment provides a memory programming method. Compared with the method in Embodiment 2, the difference of this embodiment is that: before distinguishing the fast cells from the slow cells, the programming and verification processes are performed several times, and after the incremental programming voltage rises to a certain level, , and then divide the storage cells into fast cells and slow cells for programming processing, and perform classification and judgment of programming speed in each subsequent verification process.

[0097] As an example, in step 2), before classifying the memory cells that fail the verification according to the programming speed, it further includes the step of performing a specified number of programming and verification processes on the memory cells that fail the verification. The advantage of the solution in this embodiment is that several programming and verification processes are performed before the...

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PUM

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Abstract

The invention provides a memory programming method and device, an electronic device and a readable storage medium. The memory programming method comprises the following steps:1) programming a to-be-programmed memory cell in a memory by adopting an initial programming voltage; 2) verifying whether the memory cells finish programming or not, and classifying the memory cells which do not pass the verification according to the programming speed; and 3) respectively reprogramming the memory cells which do not pass the verification and have different programming speeds by adopting different programming voltages. Through introducing the novel memory programming method and device, the electronic device and the readable storage medium, the programming speeds of the memory units are classified in the verification process after programming, and different programming voltages are applied to the memory units with different programming speeds during reprogramming, so that the interval range of the threshold voltage is further reduced, and the reliability of the memory is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a memory programming method, device, electronic equipment and readable storage medium. Background technique [0002] NAND flash memory is a non-volatile memory with the advantages of low cost, low power consumption and large storage capacity. A memory cell of a NAND flash memory distinguishes storage states by setting different threshold voltages. However, if the intervals between different threshold voltage intervals are small, the degree of discrimination of each storage state will be reduced, which will easily cause errors in the stored data. This requires that in the programming process of rewriting the NAND flash memory, the threshold voltages of each storage state should fall within a narrow range as much as possible, so as to increase the interval between the threshold voltage ranges. [0003] At present, for NAND flash memory, a method of incremental step p...

Claims

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Application Information

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IPC IPC(8): G11C16/34G11C16/08G11C16/24G11C16/04
CPCG11C16/0483G11C16/08G11C16/24G11C16/3468
Inventor 李爽王瑜张超李海波侯春源盛悦
Owner YANGTZE MEMORY TECH CO LTD
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