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Infrared imaging element, infrared imaging array and manufacturing method of infrared imaging element

An imaging element, infrared technology, applied in electrical elements, image communication, photometry, etc., can solve the problems of complex correction circuit, increased chip area, limited area, etc., to achieve performance improvement, increase thermal time constant , the effect of improving the detection sensitivity

Active Publication Date: 2022-02-08
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is necessary to remove the substrate below the temperature detection part, and the temperature detection part, supporting legs, and wiring are arranged on the same plane, so there are 1) restrictions on the area where the temperature detecting part, supporting legs, and wiring are arranged, and 2) inability to Complicated correction circuits are provided for each pixel, 3) There are problems such as increased chip area due to the formation of readout circuits outside the pixel array area

Method used

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  • Infrared imaging element, infrared imaging array and manufacturing method of infrared imaging element
  • Infrared imaging element, infrared imaging array and manufacturing method of infrared imaging element
  • Infrared imaging element, infrared imaging array and manufacturing method of infrared imaging element

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Embodiment approach 1

[0055] figure 1 It is a cross-sectional view of the infrared imaging element according to Embodiment 1 of the present invention, indicated by 100 as a whole, figure 2 is viewed in the Z direction figure 1 A schematic plan view of the first substrate 50 of the infrared imaging element 100 of . Here, for ease of understanding, the figure 1 The profile of is set along the figure 2A cross-sectional view of the dotted line A-A. The infrared imaging element 100 corresponds to one pixel of the infrared imaging array.

[0056] The infrared imaging element 100 includes: a substrate 31, which has a front surface and a back surface, and is provided with a circuit part 32; the supporting leg wiring 4 is arranged above the surface of the substrate 31; There is a diode 2 electrically connected to the circuit unit 32 via the leg wiring 4 . The change in temperature of the infrared detection unit 13 is detected by the circuit unit 32 as a change in the electrical signal of the diode 2...

Embodiment approach 2

[0095] Figure 11 is a cross-sectional view of the infrared imaging element according to Embodiment 2 of the present invention, indicated by 200 as a whole, Figure 12 is viewed in the Z direction Figure 11 A schematic plan view of the first substrate 50 of the infrared imaging element 200 of . Here, for ease of understanding, Figure 11 The profile of is set along the Figure 12 Sectional view of the dotted line B-B. exist Figure 11 , 12 in, with figure 1 , 2 The same symbols indicate the same or corresponding parts.

[0096] In the infrared imaging element 200, the metal wiring 15 is also provided directly above the supporting leg wiring 4 connected to the metal layer 20, and the micro-bump bonding strength of the part of the above-mentioned infrared detection part 13 separated from the metal wiring 15 is provided thereon. Beam 23.

[0097] That is, in the infrared imaging element 200, on the first substrate 50, one end of the supporting leg wiring 4 is also conn...

Embodiment approach 3

[0101] Figure 14a It is a cross-sectional view of the infrared imaging element according to Embodiment 3 of the present invention, generally indicated by 300 . in addition, Figure 14b , 14c It is a cross-sectional view of another infrared imaging element according to Embodiment 3 of the present invention, which are generally indicated by 310 and 320 . exist Figures 14a-14c in, with figure 1 The same symbols indicate the same or corresponding parts.

[0102] In the infrared imaging elements 300 , 310 , and 320 according to Embodiment 3 of the present invention, the surface of the infrared detection unit 13 opposite to the substrate 31 is provided with an electromagnetic wave absorbing structure.

[0103] The electromagnetic wave absorbing structure absorbs infrared rays from the periodic structure protrusions 60 formed on the infrared detection unit 13 , the textured BOX oxide film 63 provided on the surface of the infrared detection unit 13 , and the infrared absorptio...

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Abstract

The infrared imaging element includes: a substrate having a front surface and a back surface, and a circuit part; a supporting leg wiring arranged above the surface of the substrate; The diodes are electrically connected to each other, and the temperature change of the infrared detection part is detected by the circuit part as the change of the electric signal of the diode, wherein the substrate, the supporting leg wiring, and the infrared detection part are spaced apart from each other in a direction perpendicular to the surface of the substrate. cascading.

Description

technical field [0001] The present invention relates to a thermal infrared solid-state imaging device that converts incident infrared rays into heat and detects them, and more particularly relates to a thermal infrared solid-state imaging device that integrates electrical signals from semiconductor sensors with a signal processing circuit and outputs them. Moreover, it relates to the manufacturing method of an infrared imaging element. Background technique [0002] In a general thermal infrared solid-state imaging device, pixels having an adiabatic structure are arranged two-dimensionally, and an infrared image is captured by utilizing changes in the temperature of the pixels due to incident infrared rays. In the case of a thermal infrared solid-state imaging device, for example, a semiconductor device such as a diode is used as a temperature sensor constituting a pixel. In the case of using semiconductor elements, variations in electrical characteristics and temperature de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/02H01L27/144H01L27/146H04N5/33
CPCH01L27/144H01L27/146G01J1/02G01J5/0225G01J5/024G01J5/20H04N25/20H04N23/20G01J2005/0077G01J2005/202H01L27/14634H01L27/14636H01L27/1465H01L27/14689H01L27/1469
Inventor 前川伦宏
Owner MITSUBISHI ELECTRIC CORP