Low oxide trench dishing chemical mechanical polishing

A chemical mechanical, inorganic oxide technology, applied in the direction of other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve problems that do not involve the importance of oxide trench depression reduction, etc.

Pending Publication Date: 2020-01-07
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, those previously disclosed shallow trench isolation (STI) polishing compositions did not address the importance of oxide trench dishing reduction

Method used

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  • Low oxide trench dishing chemical mechanical polishing
  • Low oxide trench dishing chemical mechanical polishing
  • Low oxide trench dishing chemical mechanical polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0213] The working stock had 0.15% by weight of chemical additives, which was added to the reference stock.

[0214] Observe the effect of various selected chemical additives on membrane removal rate and selectivity.

[0215] Test the removal rate (RR, in count). The test results are listed in Table 1.

[0216] As the results shown in Table 1, slurries based on ceria-coated silica provided higher removal rates for TEOS.

[0217] Table 1. Chemical Additives on Membrane RR and TEOS:SiN selectivity effects

[0218]

[0219] As the results further shown in Table 1, the chemical additives D-sorbitol, D-mannitol, D-mannose, and xylitol inhibited the SiN removal rate relative to the reference, except meso-erythritol, while Still provides high TEOS and HDP film removal rates and provides high oxide:SiN selectivity.

Embodiment 2

[0221] In Example 2, a formulation based on 0.2% by weight of ceria-coated silica abrasive without chemical additives was used as reference.

[0222] The chemical additives were used at a concentration of 0.15% by weight (0.15X), respectively, with 0.2% by weight of ceria-coated silica as the abrasive in the working slurry.

[0223] The test results are listed in Table 2. HDP RRs in Table 1 are also listed in Table 2.

[0224] Table 3 lists the oxide trench recess rates Removal rate of relative blank HDP membrane The ratio.

[0225] Table 2. Effects of Chemical Additives on Oxide Trench Recession and HDP RR Impact

[0226]

[0227] The test results are listed in Table 2. HDP RRs in Table 1 are also listed in Table 2.

[0228] Table 3 lists the oxide trench recess rates Removal rate of relative blank HDP membrane The ratio.

[0229] Table 3. Trench Depression Rates / blank HDP RR The ratio

[0230]

[0231] As the results shown in Tables 2 and 3, ad...

Embodiment 3

[0241] Observe the effect of various selected chemical additives on the membrane removal rate (RR, expressed as count) and selectivity effects. These chemical additives were each used in a concentration of 0.1% by weight, with 0.2% by weight of ceria-coated silica as abrasive.

[0242] The test results are listed in Table 5.

[0243] Table 5. Effect of chemical additives on film RR and TEOS:SiN selectivity effects

[0244]

[0245] The results are shown in Table 5. These chemical additives D-sorbitol, D-(-)-fructose, maltitol, and dulcitol inhibited the SiN removal rate compared to the reference, while still providing high TEOS and HDP films removal rate.

[0246] The CMP composition with D-(-)-fructose inhibited the removal of TEOS in addition to SiN, but still provided high TEOS:SiN selectivity.

[0247] The effect of various selected chemical additives on oxide trench recessing relative to overpolish time was observed.

[0248] The test results are listed in Tabl...

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Abstract

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives, such as ceria coated silica particles; and the chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(-)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Description

[0001] Cross references to related patent applications [0002] This application claims the benefit of priority under 35 U.S.C. §119(e) to earlier filed U.S. Patent Applications Serial Nos. 62 / 692,633 and 62 / 692,639 (filed June 29, 2018), which are incorporated by reference in their entirety into this article. technical field [0003] The present invention relates to chemical mechanical planarization (CMP) for polishing oxide and doped oxide films. Background technique [0004] In the manufacture of microelectronic devices, an important step involved is polishing, especially for chemical mechanical polishing of surfaces, with the aim of restoring selected materials and / or planarizing structures. [0005] For example, in SiO 2 A SiN layer is deposited underneath to serve as a polish stop. The role of this polish stop is particularly important in shallow trench isolation (STI) structures. Selectivity is typically expressed as the ratio of oxide polishing rate to nitride p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/321
CPCC09G1/02H01L21/3212C09K3/1436C09K3/1454H01L21/304H01L21/31051C09K13/00C09K13/04H01L21/31053
Inventor 史晓波K·P·穆瑞拉J·D·罗斯周鸿君M·L·奥内尔
Owner VERSUM MATERIALS US LLC
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