Manufacturing method of trench mosfet, trench mosfet and electronic products
A manufacturing method and technology of electronic products, applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of parameter failure, polysilicon center carving, deposition material falling into the cavity, etc., and achieve the goal of improving the flow capacity Effect
Active Publication Date: 2022-06-24
WILL SEMICON (SHANGHAI) CO LTD
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Problems solved by technology
With this solution in the prior art, there will be voids in the deposition of the polysilicon conductive layer. If the voids are too large, the center of the polysilicon will be cut open during the reverse etching of the polysilicon conductive layer, causing subsequent deposition materials to fall into the voids, eventually resulting in leakage. , the parameter fails
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[0025] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0026] It should be noted that the terms "first", "second" and the like in the description and claims of the present invention and the above drawings are used to distinguish similar objects, and are not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used may be interchanged unde...
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The invention discloses a method for manufacturing a trench type MOSFET, a trench type MOSFET and electronic products, which can effectively solve the technical problem of voids in the conductive layer. The preparation method includes: providing a substrate; The oxide layer X and the conductive layer located on the surface of the substrate; etching the oxide layer X and the conductive layer to form a plurality of protrusion structures, the protrusion structures are trench filling materials; An oxide layer Y is grown on the layer; an epitaxial layer is formed between the plurality of protrusion structures, and a PN junction is formed on the epitaxial layer. The trench MOSFET is prepared by a trench MOSFET manufacturing method, and electronic products include the trench MOSFET.
Description
technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a manufacturing method of a trench MOSFET, a trench MOSFET and an electronic product. Background technique [0002] In the existing MOSFET fabrication scheme, TEOS (chemical formula Si(OC) is deposited on the epitaxial layer. 2 H 5 ) 4 ) as a barrier layer, expose the area to be etched with a trench lithography, and then perform dry etching to remove the exposed barrier layer. After removing the photoresist, use TEOS as a barrier to etch the trenches. After the trench etching is completed, gate oxide growth and polysilicon conductive layer deposition are performed. After the polysilicon conductive layer is deposited, reverse etching is performed with a photolithography plate of the polysilicon conductive layer. The oxide layer is then used as a passivation layer for device protection. With this solution in the prior art, there will be voids in the deposition of the ...
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IPC IPC(8): H01L21/8234H01L27/088
CPCH01L21/823437H01L27/088
Inventor 诸舜杰阮孟波董建新
Owner WILL SEMICON (SHANGHAI) CO LTD